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Hammond Manufacturing Ltd. Hammond Manufacturing L...
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Part No. |
164F20 164H20 164D28 164F12 164F120 164F10 162G56 164H10 162D48
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OCR Text |
...62d10 1.1 10v c.t. @ .11a 5v @ .22a 164e10 162e10 2.4 10v c.t. @ .25a 5v @ .5a 164f10 162f10 6 10v c.t. @ .6a 5v @ 1.2a 164g10 162g10 12 10v c.t. @ 1.2a 5v @ 2.4a 164h10 162h10 20 10v c.t. @ 2a 5v @ 4a 164j10 162j10 36 10v c.t. @ 3.6a 5v @ ... |
Description |
LOW VOLTAGE P.C. BOARD MOUNT LOW PROFILE 162/164 SERIES LOW VOLTAGE P.C. BOARD MOUNT LOW PROFILE 162/164 SERIES
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File Size |
208.84K /
2 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AOTF22N50
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OCR Text |
22a n-channel mosfet v ds i d (at v gs =10v) 22a r ds(on) (at v gs =10v) < 0.26 w symbol the aot22n50 & aotf22n50 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of pe... |
Description |
500V,22a N-Channel MOSFET
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File Size |
589.97K /
6 Page |
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it Online |
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Icemos Technology
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Part No. |
ICE22N65W
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OCR Text |
...t summary i d t a =25 o c 22a max v ( br)dss i d =250ua 650v min r ds(on) v gs =10v 0.165 typ q g v ds =480v 82nc typ icemos and its sister company 3 d semi own the fundamental patents ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
538.97K /
8 Page |
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it Online |
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Icemos Technology
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Part No. |
ICE22N60
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OCR Text |
... summary i d t a =25 o c 22a max bv dss @tjmax i d =250ua 650v min r ds(on) v gs =10v 0.14 typ q g v ds =480v 82nc typ icemos and its sister company 3 d semi own the fundamental patent... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
553.14K /
9 Page |
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it Online |
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Icemos Technology
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Part No. |
ICE22N60W
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OCR Text |
... summary i d t a =25 o c 22a max bv dss @tjmax i d =250ua 650v min r ds(on) v gs =10v 0.14 typ q g v ds =480v 82nc typ icemos and its sister company 3 d semi own the fundamental patent... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
554.49K /
8 Page |
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it Online |
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FAIRCHILD SEMICONDUCTOR CORP
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Part No. |
FQP22P10J69Z
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OCR Text |
...d dc motor control. features -22a, -100v, r ds(on) = 0.125 ? @v gs = -10 v low gate charge ( typical 40 nc) low crss ( typical 160 pf) fast switching 100% avalanche tested improved dv/dt capability 175 c maximum junction ... |
Description |
22 A, 100 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET
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File Size |
556.53K /
8 Page |
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it Online |
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Price and Availability
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