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  32us Datasheet PDF File

For 32us Found Datasheets File :: 32    Search Time::1.5ms    
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    Philips
Part No. BU2530AW
OCR Text ... IC IB IBend t 10us 13us 32us ts IB IBend tf 10 % t VCE t t - IBM Fig.1. Switching times waveforms. Fig.2. Switching times definitions. 2 Measured with half sine-wave voltage (curve tracer). September 1...
Description Silicon Diffused Power Transistor

File Size 50.26K  /  6 Page

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    Philips
Part No. BU4530AW
OCR Text ...25 C IB IBend t 10us 13us 32us 10 VCE 1 0.01 t 0.1 1 10 IC / A 100 Fig.3. Switching times waveforms. Fig.6. High and low DC current gain. ICsat 90 % IC 100 hFE VCE = 5V - - -Tj = 85 C Tj = 25 C ...
Description Silicon Diffused Power Transistor
From old datasheet system

File Size 43.96K  /  6 Page

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    KA7307D

Samsung semiconductor
Part No. KA7307D
OCR Text ...UT ( IRIS OUT AGC OUT ) 16us 32us 16us 32us VID-97-D002 February 1997 5 Preliminary KA7307D CHARACTERISTICS GRAPH CDS/AGC ( Standard Control Characteristics ; ( Vcc = 5.0 V , Ta = 25C ) Input Control Voltage : 0 ~ 5...
Description GENERAL DESCRIPTION

File Size 150.57K  /  9 Page

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    MICROSEMI[Microsemi Corporation]
Part No. MDS500L
OCR Text ... MDS500L Pout and Nc vs Pin (32us; 2%) 700 600 500 400 300 200 100 0 0 20 40 Pin(W) Pout Efficiency 60 80 70 60 50 40 30 20 10 0 100 Pout and Nc vs Pin (32us burst,N=48) 700 600 500 70 60 50 40 30 20 10 0 10 20 30 40 50...
Description high power COMMON BASE bipolar transistor.null

File Size 261.68K  /  4 Page

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    1011LD110A

Microsemi Corporation
Part No. 1011LD110A
OCR Text ...d Bias 1.6ms 42us DC RF 32us 5us 5us Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1011LD110...
Description 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET

File Size 109.36K  /  5 Page

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    1011LD110B

Microsemi Corporation
Part No. 1011LD110B
OCR Text ...d Bias 1.6ms 42us DC RF 32us 5us 5us Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 1011LD110...
Description 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET

File Size 216.12K  /  5 Page

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    MDS140L

Microsemi Corporation
Part No. MDS140L
OCR Text ...CC = 50V Pin = 15.7W ELM Burst: 32us(On), 18us(Off), N=48, Period=23ms MIN 140 TYP MAX 15.7 UNITS W W dB % dB ns - 9.5 50 0.5 100 2:1 1. At rated output power, pulse conditions and MSC fixture 2. ELM Burst Pulse: 32us(On),...
Description 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz

File Size 198.76K  /  5 Page

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    BU2530AL

ETC
Part No. BU2530AL
OCR Text ...initions. ic ib vce icsat ibend 32us 13us 10us t t t transistor diode icsat 90 % 10 % tf ts ibend ic ib t t - ibm 2 measured with half sine-wave voltage (curve tracer). september 1997 2 rev 1.200 philips semiconductors product specificat...
Description Silicon Diffused Power Transistor

File Size 49.04K  /  6 Page

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    Microsemi, Corp.
Part No. TCS1200
OCR Text ...at 50v as well as the standard 32us,2% data at 53v microsemi reserves the right to change, without notice, th e specifications and information contained herein. visit our web site at www.microsemi.com or contact our fa...
Description 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz L BAND, Si, NPN, RF POWER TRANSISTOR

File Size 96.92K  /  4 Page

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    Microsemi
Part No. 0912LD20
OCR Text ... 0912ld20 pw = 32us, dc=2%: typical data 0912ld20 i nput/output (typical) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 input power (w) ouput power (w) 960mhz 1090mhz 1215mhz 0912ld20 input/...
Description Pulsed Power Avionics 960-1215 MHz (Si)

File Size 251.17K  /  5 Page

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