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DYNEX[Dynex Semiconductor]
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Part No. |
GP801DCS18
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OCR Text |
...= 800A, VR = 50% VCES, dIF/dt = 3500a/s Test Conditions IC = 800A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 1000 250 500 300 200 300 180 450 120 Max. 1200 350 600 400 300 400 240 Units ns ns mJ ns ns mJ C A mJ
Tcase... |
Description |
Chopper Switch Low VCESAT IGBT Module
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File Size |
168.98K /
10 Page |
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it Online |
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Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
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Part No. |
GP801DDM18
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OCR Text |
...= 800A, VR = 50% VCES, dIF/dt = 3500a/s Test Conditions IC = 800A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 1000 250 500 300 200 300 180 450 120 Max. 1200 350 600 400 300 400 240 Units ns ns mJ ns ns mJ C A mJ
Tcase... |
Description |
Hi-Reliability Dual Switch Low VCESAT IGBT Module
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File Size |
141.87K /
10 Page |
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it Online |
Download Datasheet
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Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
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Part No. |
GP801DDS18
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OCR Text |
...= 800A, VR = 50% VCES, dIF/dt = 3500a/s Test Conditions IC = 800A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 1000 250 500 300 200 300 180 450 120 Max. 1200 350 600 400 300 400 240 Units ns ns mJ ns ns mJ C A mJ
Tcase... |
Description |
Dual Switch Low VCE(SAT) IGBT Module 800 A, 1800 V, N-CHANNEL IGBT
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File Size |
142.40K /
10 Page |
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it Online |
Download Datasheet
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DYNEX[Dynex Semiconductor]
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Part No. |
GP801FSM18
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OCR Text |
...= 800A, VR = 50% VCES, dIF/dt = 3500a/s Test Conditions IC = 800A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 1000 250 500 300 200 300 180 450 120 Max. 1200 350 600 400 300 400 240 Units ns ns mJ ns ns mJ C A mJ
Tcase... |
Description |
Hi-Reliability Single Switch Low VCE(SAT) IGBT Module
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File Size |
141.33K /
10 Page |
View
it Online |
Download Datasheet
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NTE[NTE Electronics]
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Part No. |
NTE5585 NTE5580 NTE5582 NTE5584
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OCR Text |
.... . . . . . . . . . . . . . . . 3500a Maximum I2t for Fusing (1.5msec), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32,000A2sec Peak On-State Voltage (TJ = +25C, 180 conduction, Rated IT(AV)), VTM .... |
Description |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A. Silicon Controlled Rectifier for Phase Control Applications Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
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File Size |
22.78K /
2 Page |
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it Online |
Download Datasheet
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NTE
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Part No. |
NTE5581 NTE5583 NTE5582 NTE5584
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OCR Text |
.... . . . . . . . . . . . . . . . 3500a Maximum I2t for Fusing (1.5msec), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32,000A2sec Peak On-State Voltage (TJ = +25C, 180 conduction, Rated IT(AV)), VTM .... |
Description |
(NTE5580 - NTE5585) Silicon Controlled Rectifier for Phase Control Applications
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File Size |
51.73K /
2 Page |
View
it Online |
Download Datasheet
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Price and Availability
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