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  4.5m a Datasheet PDF File

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text ...--- --- --- --- --- 12 55 71 69 4.5 7.5 2400 640 340 Max. Units Conditions --- V VGS = 0V, ID = 250a --- V/C Reference to 25C, ID = 1ma 0...5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43a)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43a)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43a)

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text ... Max. 41 29 164 200 1.3 30 4.3 -55 to + 175 300 (1.6mm from case ) Units a W W/C V V/ns C applicable Off Line SMPS Topologies l...5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E aTSINK &amp; L Ea D D IM E N SIO N S DO ...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41a)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41a)

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ...6a m 3.9 VGS = 7.0V, ID = 76a 4.0 V VDS = VGS, ID = 250a 20 VDS = 24V, VGS = 0V a 250 VDS = 24V, VGS = 0V, TJ = 150C 200 VGS = 20V na -200...5M, 1982. 2 C O N T R O LLIN G D IME N S IO N : IN C H 3 O U TLINE C O N F O R MS T O J E DE C O ...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220aB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210a?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210a)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210a?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210a)

File Size 93.04K  /  8 Page

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ...e Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized avalanche Voltage and Current TO-220aB IRF3706 D2Pak IRF3706S TO-262 I...5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E aTSINK &amp; L Ea D D IM EN S IO N S D O ...
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77a)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77a)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77a)

File Size 143.52K  /  11 Page

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...en mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #aN-994 ...5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E aTSINK &amp; L Ea D D IM E N SIO N S DO ...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220aB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62a)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62a)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62a)

File Size 141.65K  /  10 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ... = 1ma 23 m VGS = 10V, ID =28a 4.0 V VDS = VGS, ID = 250a --- S VDS = 25V, ID = 28a 25 VDS = 100V, VGS = 0V a 250 VDS = 80V, VGS = 0V, TJ =...5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57a) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57a条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57a)
100V Single N-Channel HEXFET Power MOSFET in a TO-220aB package

File Size 92.57K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...e Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized avalanche Voltage and Current absolute Maximum Ratings Symbol VDS VGS ID @ TC...5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC O...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110a??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110a)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110a?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110a)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110a?

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840aL IRF840aS IRF840aSTRR
OCR Text ... ID = 1ma 0.85 VGS = 10V, ID = 4.8a 4.0 V VDS = VGS, ID = 250a 25 VDS = 500V, VGS = 0V a 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V...5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E aTSINK &amp; L Ea D D IM E N SIO N S DO ...
Description TRaNSISTOR | MOSFET | N-CHaNNEL | 500V V(BR)DSS | 8a I(D) | TO-263aB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8a条(丁)|63aB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0a) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0a
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0a)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840a
OCR Text ... ID = 1ma 0.85 VGS = 10V, ID = 4.8a 4.0 V VDS = VGS, ID = 250a 25 VDS = 500V, VGS = 0V a 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V...5M, 1982. 2 CO NT RO LLING D IMEN S ION : IN CH 2.92 (.115) 2.64 (.104) 3 OUT LINE C ONF O RMS...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0a)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0a)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0a)

File Size 87.92K  /  8 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ....0 gfs Forward Transconductance 4.0 --- IDSS Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- IGSS Gate-to-Source Reve...5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E aTSINK &amp; L Ea D D IM EN S IO N S D O ...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0a) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0a
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0a)

File Size 169.91K  /  10 Page

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