40-1000a pdf Datasheet P3 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : TL084AMD LCP114E ZPY11 6SW120M C858AF 90EF1 1N629 TMXW356
	Product Description
	Full Text Search

40-1000a Datasheet PDF File

For 40-1000a Found Datasheets File :: 1004 Search Time::2.281ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				POWEREX[Powerex Power Semiconductors]
Part No.	CM1000HA-28H
OCR Text	...d - - - - VRMS CM1000HA-28H -40 to +150 -40 to +125 1400 20 1000 2000* 1000 2000* 5800 95 26 13 1600 2500 Units C C Volts Volts Ampere...1000A, VGE = 15V IC = 1000A, VGE = 15V, Tj = 150C Total Gate Charge Diode Forward Voltage VCC = 800V...
Description	Single IGBTMOD 1000 Amperes/1400 Volts
File Size	63.55K / 4 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	DCR1910V80 DCR1910V85 DCR1910V70 DCR1910V75
OCR Text	...DCR1910V75 DCR1910V70 Tvj = -40 to 125 C C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively L...1000A to 7200A at Tcase = 125 C 100A to 1000A at Tcase = 125 C 1000A to 7200A at Tcase = 125 C VD = ...
Description	Phase Control Thyristor Preliminary Information
File Size	138.75K / 9 Page	View it Online	Download Datasheet

				WESTCODE SEMICONDUCTORS LTD
Part No.	M1858NC160
OCR Text	...op operating temperature range -40 to +125 c t stg storage temperature range -40 to +150 c notes:- 1) de-rating factor of 0.13% per c is a...1000a/s, t j =25c v frm maximum forward recovery voltage - - 14 di/dt = 1000a/s v - - 20 rated v rrm...
Description	1858 A, 1600 V, SILICON, RECTIFIER DIODE
File Size	348.01K / 11 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. Vishay Intertechnology,Inc. Vishay Siliconix Vishay Telefunken
Part No.	BYT12P BYT12P1000 BYT12P1000A BYT12P_1000A BYT12P1 BYT12P600A BYT12P800A BYT12P/1000A
OCR Text	...V Tj=Tstg Value 1000 150 25 12 -40...+150 Unit V A A A C tp=10ms, half sinewave Maximum Thermal Resistance Tj = 25_C Parameter Juncti...1000A Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse c...
Description	Shielded Multiconductor Cable; Number of Conductors:5; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Temperature Max:80 C; Voltage Nom.:300V RoHS Compliant: Yes From old datasheet system Fast Recovery Silicon Power Rectifier
File Size	66.63K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM1000HA-24B
OCR Text	...1200 7 1000 1000 7000 50 10000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M8 2500 8.83~10.8 90~110 1.96~2.9...1000A, IB=1.33A IC=-1000A (diode forward voltage) IC=1000A, VCE=4.0V Min. -- -- -- -- -- -- 750 -- V...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	62.10K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM1000HA-2HB
OCR Text	...1000 7 1000 1000 7000 50 10000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M8 2500 8.85~10.8 90~110 1.96~2.9...1000A, IB=1.33A IC=-1000A (diode forward voltage) IC=1000A, VCE=4.0V Min. -- -- -- -- -- -- 750 -- V...
Description	1 A, NPN, Si, POWER TRANSISTOR HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
File Size	71.36K / 5 Page	View it Online	Download Datasheet

				WESTCODE SEMICONDUCTORS LTD
Part No.	M0872LC210
OCR Text	...op operating temperature range -40 to +125 c t stg storage temperature range -40 to +150 c notes:- 1) de-rating factor of 0.13% per c is a...1000a/s, t j =25c v frm maximum forward recovery voltage - - 40 di/dt = 1000a/s v i rrm peak reverse...
Description	872 A, 2100 V, SILICON, RECTIFIER DIODE
File Size	366.91K / 11 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CM1000HA-24H
OCR Text	...c - - - - Viso CM1000HA-24H -40 to +150 -40 to +125 1200 20 1000 2000* 1000 2000* 5800 8.83 ~ 10.8 1.96 ~ 2.94 0.98 ~ 1.47 1600 2500 U...1000A, VGE = 15V IC = 1000A, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	48.69K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FG1000BV-90DA
OCR Text	...000 10 17 60 500 240 15 45 100 -40 ~ +125 -40 ~ +150 12 ~ 15 530 Unit V V V V V V Unit A A A kA A2s A/s V V A A W kW W W C C kN g Aug.199...1000A, Instantaneous measurment Tj = 125C, VRRM Applied Tj = 125C, VDRM Applied, VGK = -2V Tj = 125C...
Description	HIGH POWER INVERTER USE PRESS PACK TYPE
File Size	68.65K / 4 Page	View it Online	Download Datasheet

For 40-1000a Found Datasheets File :: 1004 Search Time::2.281ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |