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  400 volt vceo optimised hfe ch Datasheet PDF File

For 400 volt vceo optimised hfe ch Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB949P CFB949AR CFD1275Q

Continental Device India Limited
Part No. CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB949P CFB949AR CFD1275Q
Description 2.000W Power PNP Plastic Leaded Transistor. 80V vceo, 2.000A Ic, 2000 - 5000 hfe. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V vceo, 2.000A Ic, 2000 - 5000 hfe. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V vceo, 2.000A Ic, 4000 - 10000 hfe. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V vceo, 2.000A Ic, 4000 - 10000 hfe. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V vceo, 2.000A Ic, 1000 - 2500 hfe. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V vceo, 2.000A Ic, 1000 - 10000 hfe. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V vceo, 2.000A Ic, 4000 - 10000 hfe. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V vceo, 2.000A Ic, 2000 - 5000 hfe. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V vceo, 2.000A Ic, 1000 - 10000 hfe. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V vceo, 2.000A Ic, 1000 - 10000 hfe. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V vceo, 2.000A Ic, 2000 - 5000 hfe. Complementary CFB949Q

File Size 147.20K  /  3 Page

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    ASI10728 VHB50-28F ASI1001 ASI10522 ASI10534 ASI10596 ASI2302 HF50-12F

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10728 VHB50-28F ASI1001 ASI10522 ASI10534 ASI10596 ASI2302 HF50-12F
Description NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:6.5 A,Vcbo: 65 V,vceo: 35 V,Vebo: 4.0 V))

File Size 17.28K  /  1 Page

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    ASI10654 TVV005

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10654 TVV005
Description NPN Silicon RF Power Transistor(Ic:4.0 A,Vcbo: 55 V,vceo: 30 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.0 A,Vcbo: 55 V,vceo: 30 V,Vebo: 4.0 V))

File Size 18.47K  /  1 Page

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    ASI10749 VMB80-28S VHB25-12S

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10749 VMB80-28S VHB25-12S
Description NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,vceo: 36 V,Vebo: 4.0 V))

File Size 15.55K  /  1 Page

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    ASI10599 HF100-12

Advanced Semiconductor, Inc.
Part No. ASI10599 HF100-12
Description NPN Silicon RF Power Transistor(Ic:20 A,Vcbo: 36 V,vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:20 A,Vcbo: 36 V,vceo: 18 V,Vebo: 4.0 V))

File Size 16.09K  /  1 Page

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    TVV100 ASI1005 ASI10524 ASI10539 ASI10638 ASI10662

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. TVV100 ASI1005 ASI10524 ASI10539 ASI10638 ASI10662
Description NPN Silicon RF Power Transistor(Ic:16 A,Vcbo: 65 V,vceo: 33 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:16 A,Vcbo: 65 V,vceo: 33 V,Vebo: 3.5 V))

File Size 17.20K  /  1 Page

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    CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY CSA968AO

Continental Device India Limited
Part No. CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY CSA968AO
Description 25.000W Medium Power PNP Plastic Leaded Transistor. 180V vceo, 1.500A Ic, 70 - 140 hfe. Complementary CSC2238AO
25.000W Medium Power PNP Plastic Leaded Transistor. 180V vceo, 1.500A Ic, 120 - 240 hfe. Complementary CSC2238AY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V vceo, 1.500A Ic, 120 - 240 hfe. Complementary CSC2238BY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V vceo, 1.500A Ic, 70 - 140 hfe. Complementary CSC2238BO
25.000W Medium Power PNP Plastic Leaded Transistor. 200V vceo, 1.500A Ic, 70 - 240 hfe. Complementary CSC2238B
25.000W Medium Power PNP Plastic Leaded Transistor. 160V vceo, 1.500A Ic, 70 - 240 hfe. Complementary CSC2238
PNP PLASTIC POWER TRANSISTORS
Single-Phase Filter; Filter Type:RFI; Current Rating:16A; voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes

File Size 121.56K  /  3 Page

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    CSD882P CSD882R CSD882 CSD882E CSD882Q

CDIL[Continental Device India Limited]
Part No. CSD882P CSD882R CSD882 CSD882E CSD882Q
Description 10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 160 - 320 hfe. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 60 - 120 hfe. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 100 - 200 hfe. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 200 - 400 hfe. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 60 - 400 hfe. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications

File Size 133.82K  /  3 Page

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    BCX52 BCX51 BCX53 BCX53-16 BCX53-10 BCX51-10 BCX51-16 BCX52-10 BCX52-16

INFINEON[Infineon Technologies AG]
Part No. BCX52 BCX51 BCX53 BCX53-16 BCX53-10 BCX51-10 BCX51-16 BCX52-10 BCX52-16
Description General Purpose Transistors - SOT89; vceo=60V; hfe=100...250
General Purpose Transistors - SOT89; vceo=45V; hfe=100...250
General Purpose Transistors - SOT89; vceo=45V; hfe=40...250
General Purpose Transistors - SOT89; vceo=80V; hfe=63...160
General Purpose Transistors - SOT89; vceo=60V; hfe=63...160
General Purpose Transistors - SOT89; vceo=45V; hfe=63...160
PNP SILICON AF TRANSISTORS

File Size 138.57K  /  5 Page

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    CDIL[Continental Device India Limited]
Part No. CSB772P CSB772R CSB772 CSB772E CSB772Q
Description 10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 60 - 400 hfe. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 200 - 400 hfe. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 60 - 120 hfe. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 100 - 200 hfe. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V vceo, 3.000A Ic, 160 - 320 hfe. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching

File Size 132.88K  /  3 Page

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For 400 volt vceo optimised hfe ch Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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