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  47a Datasheet PDF File

For 47a Found Datasheets File :: 482    Search Time::3.563ms    
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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. HUF76429S3S HUF76429P3 HUF76429P3NL HUF76429S3ST
OCR Text ...VDS, ID = 250A (Figure 11) ID = 47a, VGS = 10V (Figures 9, 10) ID = 31A, VGS = 5V (Figure 9) ID = 30A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA TO-220 an...
Description 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Dual Differential Drivers And Receivers 16-TSSOP -40 to 85 47 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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    Microsemi
Part No. APT47N65SC3
OCR Text ...apt47n65sc3 650v 47a 0.070 maximum ratings all ratings: t c = 25c unless otherwise speciied. static electrical characteristics symbol bv ds...
Description MOSFET

File Size 308.56K  /  6 Page

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    GALAXY[Galaxy Power, Inc.]
Part No. GALW9V647E
OCR Text 47a Output SIRIUS The Sirius is a 450W "stretched" quarter-brick in Galaxy Power's CoolConverterTM line of high-efficiency DC/DC converters. Very Low Common-mode Noise for a Commercial DC/DC Converter Two-stage Input Filter Constant ...
Description 48V Input, 9.6VDC, 47a Output

File Size 780.81K  /  7 Page

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    Microsemi
Part No. APT47N60SC3G
OCR Text 47a 0.070 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs...
Description MOSFET

File Size 183.78K  /  5 Page

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    FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3
OCR Text ... the data sheet. Features * 47a, -100V, rDS(ON) = 0.053 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up ...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 60.40K  /  8 Page

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    IRFU1018E IRFU1018EPBF

International Rectifier
Part No. IRFU1018E IRFU1018EPBF
OCR Text ....08mh r g = 25 , i as = 47a, v gs =10v. part not recommended for use above this value. i sd 47a, di/dt 1668a/ s, v dd v (br)dss , t j 175c. s d g pulse width 400 s; duty cycle 2%. c oss eff. (tr) is a f...
Description 60V Single N-Channel HEXFET Power MOSFET in a I-Pak package

File Size 370.87K  /  10 Page

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    HUF76121P3 HUF76121S3ST HUF76121S3S HUF76121P3NL

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. HUF76121P3 HUF76121S3ST HUF76121S3S HUF76121P3NL
OCR Text 47a, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFETTM process. This advanced process technology achieves the lowest possible on-resistance per sili...
Description 47a, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

File Size 219.46K  /  11 Page

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    Microsemi
Part No. APT80GA90LD40
OCR Text ... 1 5 v, i c = 47a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a...
Description IGBT w/ anti-parallel diode

File Size 217.16K  /  9 Page

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    Microsemi
Part No. APT80GA90B APT80GA90S
OCR Text ... 1 5 v, i c = 47a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 250 a...
Description IGBT w/o anti-parallel diode

File Size 185.54K  /  6 Page

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