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Micross Components
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| Part No. |
ICE4N70
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| OCR Text |
...s 50 v/ns v ds = 480v, i d = 4a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 65 w t c = 25c ...2a, t j = 25c - 2.6 - v gs = 10v, i d = 2a, t j = 150c r gs gate resistance - 6.3 - ? f = 1 mhz... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
754.63K /
4 Page |
 View
it Online |
Download Datasheet
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Icemos Technology
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| Part No. |
ICE4N70
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| OCR Text |
...t summary i d t a =25 o c 4a max v ( br)dss i d =250ua 700v min r ds(on) v gs =10v 1.0 typ q g v ds =480v 21nc...2a 80 mj avalanche current, repetitive i ar limited by t j max 2 a mosfet d v /... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
552.75K /
9 Page |
View
it Online |
Download Datasheet |
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Micross Components
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| Part No. |
ICE4N70FP
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| OCR Text |
...s 50 v/ns v ds = 480v, i d = 4a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c ...2a, t j = 25c - 2.6 - v gs = 10v, i d = 2a, t j = 150c r gs gate resistance - 6.3 - ? f = 1 mhz... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
738.03K /
4 Page |
View
it Online |
Download Datasheet |
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