...e. Y = A
Features
* VCC = 4.5 to 5.5 V operation * Input terminal has protection diode
Function Table
Input A H L H : High level L :...08 0.40 0.06
0.10 0.10
0.70 0.20
0.15 0.12 M
Hitachi Code JEDEC EIAJ Weight (reference ...
................................. -5 V IC Collector Current.......................................................................................08.10 Revised Date : 2002.05.07 Page No. : 2/3
Saturation Voltage & Collector Current
1000 VCE(s...
...V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3210 --- VGS = 0V 690 --- VDS = 25V ...08 (.20 0)
0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM
0.5 5 (.022 ) 0.4 6 (.018 )
M...
Description
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
... See Fig. 10 D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact S 3210 --- VGS = 0V 690 --- VDS = 25...08 (.200 )
0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM
0.55 (.022) 0.46 (.018)
1 .39 (.055...
Description
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
...jmax
G
VDSS = 55V RDS(on) = 5.3m
S
Benefits
q q q q q q
ID = 169A
Description
Specifically designed for Automotive applicati...08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche...
Description
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A? Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A) Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)
...D D
2
7
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA ...08 0.07 0.06 0.05 0.04 2.0 4.0 6.0 8.0
3.000
2.500
2.000
VGS = 2.7V
1.500
ID = 4.2...
Description
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)