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  600v s Datasheet PDF File

For 600v s Found Datasheets File :: 12111    Search Time::1.625ms    
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    ELM32434LA-S

ELM Technology Corporation
Part No. ELM32434LA-s
OCR Text ...d low gate resistance. ? vds=600v ? id=2a ? rds(on) < 4.4 (vgs=10v) 6 - single n-channel mosfet pin no. pin name 1 gate 2 drain 3 source pin configuration circuit to-252-3(top view) s g d 1 3 2 t a b 2 elm32434la-s electrical chara...
Description single N-channel MOsFET

File Size 530.52K  /  6 Page

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    IRGBC30KD2-S

International Rectifier
Part No. IRGBC30KD2-s
OCR Text ...d UltraFast CoPack IGBT VCEs = 600v VCE(sat) 3.8V G E @VGE = 15V, IC = 14A n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IG...
Description INsULATED GATE BIPOLAR TRANsIsTOR

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    IRGBC20M-S

International Rectifier
Part No. IRGBC20M-s
OCR Text ...nt vs. frequency curve v ces = 600v v ce(sat) 2.3v @v ge = 15v, i c = 8.0a e c g n - c h a n n e l pd - 9.1131a description parameter min. typ. max. units r q jc junction-to-case ? ? 2.1 r q ja junction-to-ambient, (pc...
Description Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体

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    IRGBC40K-S

International Rectifier
Part No. IRGBC40K-s
OCR Text ...nt vs. frequency curve v ces = 600v v ce(sat) 3.2v @v ge = 15v, i c = 25a e c g n-channel pd - 9.1134 description parameter min. typ. max. units r q jc junction-to-case ------ ------ 0.77 r q ja junction-to-ambient, (p...
Description Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体

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    IRG4BC20FD-S IRG4BC20FD-STRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4BC20FD-s IRG4BC20FD-sTRL
OCR Text ...C Fast CoPack IGBT VCEs = 600v G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-cha nn el Benefits * Generation 4 IGBTs of...s Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector...
Description 600v Fast 1-8 kHz Discrete IGBT in a D2-Pak package
INsULATED GATE BIPOLAR TRANsIsTOR WITH ULTRAFAsT sOFT RECOVERY DIODE(Vces=600v, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) 绝缘栅双极型晶体管,超快软恢复二极管VCEs和\u003d 600v电压的Vce(on)典\u003d 1.66V,@和VGE \u003d 15V的,集成电路\u003d 9.0,9.0
CAP 0.01UF 25V 10% X7R sMD-0508 TR-7 PLATED-NI/sN 绝缘栅双极型晶体管,超快软恢复二极管(VCEs和\u003d 600v电压的Vce(on)典\u003d 1.66V,@和VGE \u003d 15V的,集成电路\u003d 9.0,9.0

File Size 220.13K  /  10 Page

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    IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4BC30s-s IRG4BC30ss IRG4BC30s-sTRL IRG4BC30s-sTRR
OCR Text ... standard speed IGBT VCEs = 600v G E VCE(on) typ. = 1.4V @VGE = 15V, IC = 18A n-channel Benefits * Generation 4 IGBTs offer hi...s Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CEs V(BR)ECs V(BR)CEs/T...
Description TRANsIsTOR | IGBT | N-CHAN | 600v V(BR)CEs | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600v的五(巴西)国际消费电子展| 18A条一(c)|63AB
INsULATED GATE BIPOLAR TRANsIsTOR standard speed IGBT(Vces=600v, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度(VCEs和\u003d 600v电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条)
INsULATED GATE BIPOLAR TRANsIsTOR standard speed IGBT(Vces=600v Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600v DC-1 kHz (standard) Discrete IGBT in a D2-Pak package

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    IRG4BC20UD-S

International Rectifier
Part No. IRG4BC20UD-s
OCR Text ...eatures features e g c v ces = 600v v ce(on) typ. = 1.85v @v ge = 15v, i c = 6.5a ultrafast copack igbt 1/12/01 ? ultrafast: optimized...s 2 www.irf.com parameter min. typ. max. units conditions q ...
Description 600v UltraFast 8-60 kHz Copack IGBT in a D2-Pak package

File Size 243.85K  /  11 Page

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    Nanjing Ouzhuo Technology Co., Ltd.
Part No. OH49F-s
OCR Text ...dy model: 6000v, machine model: 600v typical typical typical typical applications applications applications applications current sensing m...s f-s f-s f-s linear hall-effect ic nanjing nanjing nanjing nanjing ouzhuo ouzhuo ouzhuo ouzhuo tech...
Description LINEAR HALL-EFFECT IC

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. WTF16A60-s
OCR Text ...etitive peak off -state voltage:600v ? r.m.s on-state current(i t(rms) =16a) ? isolation voltage(v iso =1500v ac) ? high commutation dv/dt general description this device is fully isolated package suitable for ac switching application,phase...
Description Bi-Directional Triode Thyristor

File Size 334.91K  /  5 Page

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