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840v Datasheet PDF File

For 840v Found Datasheets File :: 87 Search Time::1.891ms
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					Fairchild Semiconductor
Part No.	HGT1S2N120CNDS HGTP2N120CND
OCR Text	...ion temperature. 2. v ce(pk) = 840v, t j = 125 o c, r g = 51 ? . electrical specifications t c = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = ...
Description	13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
File Size	137.62K / 8 Page	View it Online	Download Datasheet

					Intersil Corporation
Part No.	HGTG10N120BND FN4579
OCR Text	...ction temperature. 2. VCE(PK) = 840v, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC TC...
Description	From old datasheet system 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 35A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	81.64K / 7 Page	View it Online	Download Datasheet

					INTERSIL[Intersil Corporation]
Part No.	HGTG11N120CND FN4580
OCR Text	...ction temperature. 2. VCE(PK) = 840v, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC TC...
Description	43A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode From old datasheet system
File Size	81.13K / 7 Page	View it Online	Download Datasheet

					Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG10N120BND
OCR Text	...ction temperature. 2. VCE(PK) = 840v, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = 1200V TC = 25oC TC = 125oC TC = 150oC TC...
Description	36 MACROCELL 3.3 VOLT ISP CPLD 35 A, 1200 V, N-CHANNEL IGBT, TO-247 35A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	109.35K / 8 Page	View it Online	Download Datasheet

					Fairchild Semiconductor
Part No.	HGT1S2N120BNS9A HGTD2N120BNS HGT1S2N120BNS HGTP2N120BN
OCR Text	..., t j = 25 o c. 3. v ce(pk) = 840v, t j = 125 o c, r g = 51 ? . electrical specifications t c = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = ...
Description	12A, 1200V, NPT Series N-Channel IGBT TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 12A I(C) \| TO-263AB
File Size	132.11K / 8 Page	View it Online	Download Datasheet

					Fairchild Semiconductor
Part No.	11N120CN
OCR Text	..., t j = 25 o c. 3. v ce(pk) = 840v, t j = 125 o c, r g = 10 ? . electrical specifications t c = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = ...
Description	Search --To HGTG11N120CN
File Size	170.49K / 7 Page	View it Online	Download Datasheet

					Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N12
OCR Text	...= 400H, TJ = 25oC. 3. VCE(PK) = 840v, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = 1200V TC = 25o...
Description	43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB 43A/ 1200V/ NPT Series N-Channel IGBT 43A 1200V NPT Series N-Channel IGBT
File Size	135.28K / 7 Page	View it Online	Download Datasheet

					Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	HGT1S1N120BNDS HGTP1N120BND HGT1S1N120BNDS9A
OCR Text	...ction temperature. 2. VCE(PK) = 840v, TJ = 125oC, RG = 82. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC MI...
Description	5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(5.3A, 1200V,NPT系列N沟道绝缘栅双极型晶体管（带反并行超快速二极管 5.3 A, 1200 V, N-CHANNEL IGBT, TO-263AB 5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	74.80K / 7 Page	View it Online	Download Datasheet

For 840v Found Datasheets File :: 87 Search Time::1.891ms
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