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SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
LET9130
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| OCR Text |
...E LATERAL MOSFETs * IS-95 CDMA: 865-895 MHz / 28 V POUT = 25 W EFF. = 29 % * EDGE: 920-960 MHz / 28 V POUT = 45 W EFF. = 38 % * GSM: 920-960 MHz / 28 V POUT = 135 W EFF. = 51 % * EXCELLENT THERMAL STABILITY * BeO FREE PACKAGE * INTERNAL INP... |
| Description |
RF POWER TRANSISTORS Ldmos Enhanced Technology
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| File Size |
56.64K /
6 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MHVIC915NR2
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| OCR Text |
... Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz) Bias Sense FET Drain Current VBSD = 27 V VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA Gps PAE I...960 MHz) Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 23 dBm Group Delay @ Pout = 23 dBm... |
| Description |
RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
489.75K /
16 Page |
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it Online |
Download Datasheet |
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Freescale Semiconductor
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| Part No. |
MWE6IC9080GNR1 MWE6IC9080NBR1
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| OCR Text |
...ching that makes it usable from 865 to 960 mhz. this multi--stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulations. ? typical gsm performance: v dd =28volts,i dq1 = 230 ma, i dq2 = 630 ... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
762.86K /
19 Page |
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it Online |
Download Datasheet |
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Motorola
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| Part No. |
MHVIC915R2
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| OCR Text |
... Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz) Bias Sense FET Drain Current VBSD = 27 V VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA Gps IRL ...960 MHz) Deviation from Linear Phase @ Pout = 23 dBm Group Delay @ Pout = 23 dBm Insertion Phase Win... |
| Description |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
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| File Size |
463.26K /
12 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6S9125NR1
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| OCR Text |
...watt avg., full frequency band (865 - 895 mhz), is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13) channel bandwidth = 1.2288 m...960 mhz) power gain ? 20 db drain efficiency ? 40% (typ) spectral regrowth @ 400 khz offset = - 63 ... |
| Description |
RF Power Field Effect Transistors 射频功率场效应晶体管
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| File Size |
471.78K /
16 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
Motorola, Inc.
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| Part No. |
MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D
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| OCR Text |
... Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz) Bias Sense FET Drain Current VBSD = 27 V VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA Gps IRL ...960 MHz) Deviation from Linear Phase @ Pout = 23 dBm Group Delay @ Pout = 23 dBm Insertion Phase Win... |
| Description |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
648.85K /
12 Page |
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it Online |
Download Datasheet |
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