RF-bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA RF-bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz NPN silicon RF Transistor
From old datasheet system TOSHIBA bipolar LINEAR INTEGRATEd CIRCUIT silicon MONOLITHIC TOSHIBA bipolar LINEAR INTEGRATEd CIRCUIT silicon MONOLITHIC 30W BTL AUdIO POWER AMPLIFIER
INSULATEd GATE bipolar TRANSISTOR silicon N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated Gate bipolar Transistor silicon N Channel IGBT