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				Austin Semiconductor http://
Part No.	AS8FLC2m32BP-90_IT AS8FLC2m32BP-90_Q AS8FLC2m32BP-90_XT AS8FLC2m32BQ-90_IT AS8FLC2m32BQ-90_Q AS8FLC2m32BQ-90_XT AS8FLC2m32BP-70_IT AS8FLC2m32BP-70_Q AS8FLC2m32BP-70_XT AS8FLC2m32BP-120_IT AS8FLC2m32BP-120_Q AS8FLC2m32BP-120_XT AS8FLC2m32BP-100_IT AS8FLC2m32BP-100_Q AS8FLC2m32BP-100_XT AS8FLC2m32BQ-100_IT AS8FLC2m32BQ-100_Q AS8FLC2m32BQ-100_XT AS8FLC2m32BQ-120_IT AS8FLC2m32BQ-120_Q AS8FLC2m32BQ-120_XT AS8FLC2m32BP-90/IT AS8FLC2m32BP-90/Q AS8FLC2m32BP-90/XT AS8FLC2m32BP-70/IT AS8FLC2m32BP-70/Q AS8FLC2m32BQ-90/IT AS8FLC2m32BQ-70/IT AS8FLC2m32BQ-90/Q AS8FLC2m32BQ-70/Q AS8FLC2m32BP-120/IT AS8FLC2m32BP-120/Q AS8FLC2m32BP-120/XT AS8FLC2m32BP-100/XT AS8FLC2m32BP-100/Q AS8FLC2m32BP-70/XT AS8FLC2m32BQ-120/IT AS8FLC2m32BQ-120/Q AS8FLC2m32BQ-100/IT AS8FLC2m32BQ-100/Q AS8FLC2m32BQ-100/XT AS8FLC2m32BQ-120/XT AS8FLC2m32BQ-90/XT AS8FLC2m32BQ-70/XT AS8FLC2m32
OCR Text	...hip Module organized as 2m x 32 bits. The module achieves high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. The military grade product is manufactured in compliance to the MIL-PRF-38...
Description	Hermetic, Multi-Chip Module (MCM) 64Mb, 2m x 32, 3.3Volt Boot Block FLASH Array
File Size	399.78K / 29 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPD23C32000ALGY-XXX-MKH UPD23C32000AL UPD23C32000ALGX UPD23C32000ALGX-XXX UPD23C32000ALGY-MJH UPD23C32000ALGY-MKH UPD23C32000ALGY-XXX-MJH
OCR Text	...he PD23C32000AL is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits, WORD...2m-word by 16-bit) Low level : BYTE mode (4M-word by 8-bit) A0 to A20 (Address inputs) Input Address...
Description	32m-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2m-WORD BY 16-BIT (WORD MODE)
File Size	253.22K / 20 Page	View it Online	Download Datasheet

				Atmel Corp
Part No.	AT52BR3244
OCR Text	...anized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sectors for erase operations. The device has CE and OE cont...
Description	32m bit Flash combined with a 4M bit/8 mbit SRAM. Not recommended for new designs. New designs shoul From old datasheet system
File Size	319.63K / 44 Page	View it Online	Download Datasheet

				Etron Technology, Inc.
Part No.	EM68916DVAA-6H EM68916DVAA-75H
OCR Text	...ew The EM68916D is 134,217,728 bits of double data rate synchronous DRAM organized as 4 banks of 2,097,152 words by 16 bits. The synchronou...2m x 16 CELL ARRAY (BANK #0) Column Decoder A10/AP COLUMN COUNTER MODE REGISTER 2m x 16 ...
Description	8M x 16 Mobile DDR Synchronous DRAM (SDRAM)
File Size	326.50K / 40 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	HYB39S64160BTL-7.5
OCR Text	...itecture that prefects multiple bits and then synchronizes the output data to a system clock. the chip is fabricated using the infineon adva...2m x8 sdram hyb 39s64800bt-8 q67100-q1841 p-tsop-54-2 (400mil) 125mhz 4b 2m x8 sdram hyb 39s64160...
Description	x16 SDRAM x16内存
File Size	299.20K / 53 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	UPD23C32300GZ-XXX-MJH UPD23C32300 UPD23C32300F9-BC3 UPD23C32300F9-XXX-BC3 UPD23C32300GZ-MJH
OCR Text	... The PD23C32300 is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits, WORD...2m-word by 16-bit) Low level : BYTE mode (4M-word by 8-bit) A0 to A20 (Address inputs) Input Address...
Description	32m-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2m-WORD BY 16-BIT (WORD MODE) 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式） CAP 0.01UF 100V 5% X7R SMD-0805 TR-13 PLATED-NI/SN 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）
File Size	236.14K / 16 Page	View it Online	Download Datasheet

				Integrated Device Technology, Inc.
Part No.	ICS8427DK-02LF ICS8427DY-02LF
OCR Text	...s loaded by sampling the s_data bits with the rising edge of s_clock. the contents of the shift register are loaded into the m divider and n...2m fxtal x n 16 fvco = fxtal x 2m t1 t0 test output 0 0 low 0 1 s_data, shift register input 1 0 ...
Description	500MHZ, LOW JITTER LVCMOS/CRYSTAL-TO-LVHSTL FREQUENCY SYNTHESIZER 500MHz的低抖动的LVCMOS /水晶到LVHSTL频率合成 500MHZ, LOW JITTER LVCMOS/CRYSTAL-TO-LVHSTL FREQUENCY SYNTHESIZER 500MHz的低抖动LVCMOS /水晶LVHSTL频率合成
File Size	251.38K / 21 Page	View it Online	Download Datasheet

				Samsung Electronics
Part No.	K5L2731CAM-D770
OCR Text	...program operation in unit of 16 bits (Word) and erases in units of a block. Single or multiple blocks can be erased. The block erase operation is completed within typically 0.7 sec. The device requires 15mA as program/erase current in the c...
Description	128Mb NOR Flash 32mb UtRAM
File Size	942.76K / 65 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	...32E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words...2m x 16 Sense AMP 8M x 4 / 4M x 8 / 2m x 16 8M x 4 / 4M x 8 / 2m x 16 8M x 4 / 4M x 8 / 2m x 16 Refr...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

For bits 2m Found Datasheets File :: 2293 Search Time::2.515ms
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