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NXP Semiconductors
Murata Power Solutions, Inc.
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| Part No. |
PHU101NQ03LT PHU101NQ03LT127
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| OCR Text |
... E1 A1
A
d1 mounting base d2
L1 Q
L
1
2
3
e1 e
b
w
M
c
0
2.5 scale
5 mm
dIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.93 0.46 b 0.89 0.71 c 0.56 0.46 d1 1.10 0.96 d2 6.2... |
| Description |
N-channel TrenchMOS logic level FET
75 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA PLASTIC, TO-251, ipak-3
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| File Size |
180.16K /
13 Page |
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it Online |
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List of Unclassifed Manufacturers
STMicroelectronics
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| Part No. |
STF5N52K3 STP5N52K3 STd5N52K3 STB5N52K3
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| OCR Text |
...l parameter value unit to- 22 0 d2 pak to -2 20f p i pak dpak r thj-case thermal resistance junction-case max. 1.79 5 1.79 c/w r thj-amb th...d = 1 ma, v gs = 0 525 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v d... |
| Description |
N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3 Power MOSFET d2PAK, dPAK, TO-220FP, TO-220, ipak
N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET
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| File Size |
1,168.00K /
23 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP95N3LLH6
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| OCR Text |
...ata symbol parameter value unit d2 pak dpa k i pak to- 2 20 r thj-case thermal resistance junction-case max 2.14 c/w r thj-amb thermal resi...d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 30 v v ds = 30... |
| Description |
N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI deepGATE(TM) Power MOSFET in TO-220 package
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| File Size |
915.91K /
18 Page |
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it Online |
Download Datasheet |
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