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  id-5.6a Datasheet PDF File

For id-5.6a Found Datasheets File :: 3757    Search Time::2.078ms    
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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ...S = -60V RDS(on) = 0.28 G ID = -11A S Third Generation HEXFETs from International Rectifier utilize advanced processing techniques...5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Pa...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ...perature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings -60 20 -12 -48 -12 -12 12 25 150 -55 to +150 ...5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.11 0.16 8 580 300 85 10 55 85 60 -1.2 60 Max -- --...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ540

HITACHI[Hitachi Semiconductor]
Part No. 2SJ540
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -12 -48 -12 Unit V V A A A A mJ W C C Body-drain diode reverse ...5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.11 0.16 8 580 300 85 10 55 85 60 -1.2 60 Max -- --...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.52K  /  9 Page

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    2SJ545

HITACHI[Hitachi Semiconductor]
Part No. 2SJ545
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -12 -48 -12 Unit V V A A A A mJ W C C Body-drain diode reverse ...5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.11 0.16 8 580 300 85 10 55 85 60 -1.2 60 Max -- --...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.81K  /  9 Page

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    2SJ549 2SJ549L 2SJ549S

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SJ549 2SJ549L 2SJ549S
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -12 -48 -12 Unit V V A A A A mJ W C C Body-drain diode reverse ...5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.11 0.16 8 580 300 85 10 55 85 60 -1.2 60 Max -- --...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开

File Size 54.89K  /  9 Page

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    2SJ560

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SJ560
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings -20 10 -1.5 -6 1.3 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a cera...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
Zener Diode; Zener Voltage Typ, Vz:25V; Vz Test Current, Izt:500mA; Power Dissipation, Pd:50W; Package/Case:DO-5; Mounting Type:Through Hole 超高速开关应

File Size 182.72K  /  4 Page

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    2SJ579

SANYO[Sanyo Semicon Device]
Part No. 2SJ579
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings -60 20 -1.2 -4.8 1.5 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a ce...
Description Ultrahigh-Speed Switching Applications

File Size 41.45K  /  4 Page

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    2SK1098-M

FUJI[Fuji Electric]
Part No. 2SK1098-M
OCR Text ...e Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 150 6 24 6 20 30 150 -55 ~ +150 Unit V A A A V W C C > Equiva...5 10 0,2 10 0,40 0,33 6 600 100 30 10 40 90 30 1,01 80 Max. 2,5 500 1,0 100 0,65 0,50 900 150 45 ...
Description N-channel MOS-FET

File Size 176.27K  /  2 Page

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    2SK1187

SANKEN[Sanken electric]
Part No. 2SK1187
OCR Text ID ID (pulse) PD EAS Tch Tstg Ratings 100 20 12 48 (Tch 150C) (Ta = 25C) External dimensions 1 ...... FM20 Electrical Characteristics ...5 0.12 650 240 70 55 0.16 min 100 500 250 4.0 Ratings typ max Unit V nA A V S pF pF ns ns (Ta = 25...
Description MOSFET

File Size 33.28K  /  1 Page

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    FQT4N25

Fairchild Semiconductor, Corp.
Part No. FQT4N25
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...5.5 2.5 0.02 -55 to +150 300 - Derate above 25C Operating and Storage Temperature Range Maximum l...
Description 250V N-Channel MOSFET 0.83 A, 250 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 652.28K  /  8 Page

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