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  irh7450 irh8450 repetitive ava Datasheet PDF File

For irh7450 irh8450 repetitive ava Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    NTE6102 NTE6109 NTE6103 NTE6104 NTE6108

NTE[NTE Electronics]
Part No. NTE6102 NTE6109 NTE6103 NTE6104 NTE6108
Description Industrial rectifier, 550A. Cathode to case. repetitive peak reverse voltae 1600V.
Industrial rectifier, 550A. Cathode to case. repetitive peak reverse voltae 1200V.
Industrial rectifier, 550A. Anode to case. repetitive peak reverse voltae 600V.

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    NTE[NTE Electronics]
Part No. NTE5705 NTE5700 NTE5702 NTE5701 NTE5703 NTE5704
Description Industrial power module. Hybrid doubler. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. SCR AC switch. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. Single phase, all SCR bridge. Max repetitive peak reverse voltage Vrrm = 1200V.
Industrial power module. Single phase, hybrid bridge, common anode, freewheeling diode. Max repetitive peak reverse voltage Vrrm = 1200V.

File Size 60.29K  /  4 Page

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    HIROSE[Hirose Electric]
Hirose Electric USA, INC.
Part No. HD-02103AST
Description    Stick Coupler
SCR Thyristor; Thyristor Type:Sensitive Gate; Peak repetitive Off-State Voltage, Vdrm:60V; On-State RMS Current, IT(rms):800mA; Peak Non repetitive Surge Current, Itsm:8A; Gate Trigger Current Max, Igt:200uA

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    IRFE024 IRFE024-15

International Rectifier
Part No. IRFE024 IRFE024-15
Description    Simple Drive Requirements
repetitive avaLANCHE AND dv/dt RATED HEXFET剖TRANSISTORS SURFACE MOUNT (LCC-18)
repetitive avaLANCHE AND dv/dt RATED HEXFET?TRANSISTORS SURFACE MOUNT (LCC-18)

File Size 225.62K  /  7 Page

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    XC6383C351PL XC6383A351ML XC6383A351MR XC6383A351PL XC6383A351PR XC6383C351ML XC6383C351MR XC6383C351PR XC6383F351PR XC6

TOREX[Torex Semiconductor]
TOREX SEMICONDUCTOR LTD.
Part No. XC6383C351PL XC6383A351ML XC6383A351MR XC6383A351PL XC6383A351PR XC6383C351ML XC6383C351MR XC6383C351PR XC6383F351PR XC6383 XC6383B351ML XC6383B351PL XC6383B351PR XC6383D351ML XC6383D351MR XC6383D351PL XC6383D351PR XC6383E351ML XC6383E351MR XC6383E351PL XC6383E351PR XC6383F351ML XC6383F351MR XC6383F351PL XC6383B351MR
Description Hall Effect IC; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
LEAD FREE EXT TEMP A2982 20L SOIC
XC6383
Standard Recovery Rectifier; repetitive Reverse Voltage Max, Vrrm:50V; Forward Current Avg Rectified, IF(AV):1A; Non repetitive Forward Surge Current Max, Ifsm:30A; Forward Voltage Max, VF:1.1V; Package/Case:DO-41; Current Rating:1A
50V 1A 1N4001 (DO-41)

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    Analog Devices, Inc.
HIROSE ELECTRIC Co., Ltd.
Part No. BD825-16 BD827-10 BD827-6 BD829-6
Description SCR Thyristor; SCR Type:Standard Gate; Peak repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA
SCR Thyristor; SCR Type:Standard Gate; Peak repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1.5AI(丙)|02
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一(c)|202

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    NTE[NTE Electronics]
Part No. NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NTE5868 NTE5867 NTE5860 NTE5857 NTE5858 NTE5851 NTE5852 NTE5853 NTE5854 NTE5855 NTE5856 NTE5859
Description Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.

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    MOTOROLA[Motorola, Inc]
Part No. SC261 SC260 SC2603 SC260D SC260M SC260M3 SC261B SC261D SC261M
Description Triac. Bidirectional triode thyristor. 25A RMS. repetitive peak off-state voltage 200 V.
Triac. Bidirectional triode thyristor. 25A RMS. repetitive peak off-state voltage 600 V.
Triac. Bidirectional triode thyristor. 25A RMS. repetitive peak off-state voltage 400 V.
Triacs Bidirectional Triode Thyristors

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    A29001 A290011T-55 A290011T-70 A290011TL-70 A290011TV-70 A290011UL-90 A290011UV-70 A290011UV-90 A29001TL-55 A29001U-90 A

AMIC Technology Corporation
AMIC Technology, Corp.
Part No. A29001 A290011T-55 A290011T-70 A290011TL-70 A290011TV-70 A290011UL-90 A290011UV-70 A290011UV-90 A29001TL-55 A29001U-90 A29001UL-55 A29001UV-70 A29001UV-90 A290011T-90 A290011TL-55 A290011TL-90 A290011U-55 A290011U-70 A290011U-90 A29001T-70 A29001T-90 A29001TV-55 A29001TV-70 A29001TV-90 A29001U-55 A290011TV-55 A290011TV-90 A290011UL-55 A290011UL-70 A290011UV-55 A29001T-55 A29001TL-90 A29001U-70 A29001UL-70 A29001UL-90 A29001UV-55 A29001TL-70
Description 128K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
5015 RR 4#12 SKT RECPT
5015 RR 4#12 PIN RECPT
SCR Thyristor; Thyristor Type:Standard Gate; Peak repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):25A; Peak Non repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):16A; Peak Non repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):25A; Peak Non repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):16A; Peak Non repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Peak Non repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K的8位CMOS 5.0伏只,引导扇区闪

File Size 316.86K  /  32 Page

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    NTE[NTE Electronics]
Part No. NTE5825 NTE5818 NTE5819 NTE5823
Description Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V.
Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp
Silicon Power Rectifier Stud Mount Fast Recovery 12 Amp
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.

File Size 17.84K  /  2 Page

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