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For moderately Found Datasheets File :: 295    Search Time::1.25ms    
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    HGTG12N60C3D

Harris, Corp.
Fairchild Semiconductor
HARRIS[Harris Corporation]
Part No. HGTG12N60C3D
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in antiparallel with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage switchin...
Description 36 MACROCELL 3.3 VOLT ISP CPLD 4A00V的,的ufs系列N沟道IGBT的与反平Hyperfast二极
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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    HGT1S7N60C3D HGT1S7N60C3DS HGTP7N60C3D

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60C3D HGT1S7N60C3DS HGTP7N60C3D
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. The IGBT is ideal for many high voltage switching a...
Description 3.3V 72-mc CPLD
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

File Size 197.06K  /  7 Page

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    HGTG24N60D1D

INTERSIL[Intersil Corporation]
Part No. HGTG24N60D1D
OCR Text ...-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. The IGBTs are ideal for many high voltage switching applications o...
Description 3.3V 36-mc CPLD
24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
24A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

File Size 35.26K  /  5 Page

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    HGTG24N60D1

INTERSIL[Intersil Corporation]
Part No. HGTG24N60D1
OCR Text ...-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls...
Description 24A/ 600V N-Channel IGBT
24A, 600V N-Channel IGBT

File Size 32.04K  /  4 Page

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    HGTP10N40F1D HGTP10N50F1D

INTERSIL[Intersil Corporation]
Part No. HGTP10N40F1D HGTP10N50F1D
OCR Text ...-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. IGBTs are ideal for many high voltage switching applications opera...
Description 10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

File Size 33.70K  /  5 Page

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    HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL
OCR Text ...-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applicati...
Description    600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk

File Size 170.23K  /  8 Page

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    HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for h...
Description 600V SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBTs 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBTs
600 V, SMPS N-Channel IGBT

File Size 180.89K  /  8 Page

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    HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A

Fairchild Semiconductor
Part No. HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switchi...
Description 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

File Size 202.82K  /  7 Page

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    HGTP12N60B3 HGT1S12N60B3S FN4410

INTERSIL[Intersil Corporation]
Part No. HGTP12N60B3 HGT1S12N60B3S FN4410
OCR Text ...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls...
Description From old datasheet system
27A, 600V, UFS Series N-Channel IGBTs
27A/ 600V/ UFS Series N-Channel IGBTs

File Size 111.87K  /  7 Page

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