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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN151L LN151 LN151F
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| OCR Text |
...nfrared light emission close to monochromatic light : P = 950 nm (typ.) Narrow directivity, suitable for effective use of radiant power (LN151L) Wide directivity, matched for external optical systems (LN151F) TO-18 standard type package
... |
| Description |
GaAs Infrared Light Emitting Diodes
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| File Size |
40.00K /
2 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN152
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| OCR Text |
...nfrared light emission close to monochromatic light : P = 950 nm (typ.) Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors
o5.35 +0.2 -0.1 o4.2 +0.1 -0.2 3.00.3 12.7 min. 2.00.1 0.20.05
2-... |
| Description |
GaAs Infrared Light Emitting Diode
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| File Size |
35.81K /
2 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN189L
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| OCR Text |
...nfrared light emission close to monochromatic light : P = 880 nm(typ.) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems
0.75 0.35 5.00.3 6.00.3 3.40.2 3.00.2 4.00.15 1.0 0.6
1 0.40.1
3.00... |
| Description |
GaAlAs Infrared Light Emitting Diode
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| File Size |
43.01K /
2 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN189M
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| OCR Text |
...nfrared light emission close to monochromatic light: P = 880 nm (typ.) * Narrow directivity using spherical lenses; works well with optical systems in auto focus systems
6.00.3
1 0.40.1 Mark (Black) 0.3
,, ,
0.6 4.00.15 1.0
2
0.... |
| Description |
GaAlAs Infrared Light Emitting Diode
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| File Size |
35.49K /
2 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN189S
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| OCR Text |
...nfrared light emission close to monochromatic light : P = 880 nm(typ.) Narrow direcivity using spherical lenses; works well with optical systems in auto focus systems
2.00.2 1.5 0.75 0.35 5.00.3 6.00.3 3.40.2 3.00.2 4.0 0.15 1.0 0.6
1 0... |
| Description |
GaAlAs Infrared Light Emitting Diode
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| File Size |
43.06K /
2 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN51L LN51F
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| OCR Text |
...nfrared light emission close to monochromatic light : P =950 nm (typ.) Narrow directivity, suitable for effective use of optical output : = 8 deg. (LN51L) Wide directivity, matched for external optical systems : = 32 deg. (LN51F) TO-18 st... |
| Description |
GaAs Infrared Light Emitting Diodes
|
| File Size |
44.58K /
2 Page |
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Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN52
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| OCR Text |
...nfrared light emission close to monochromatic light : P = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors
o5.35 +0.2 -0.1 o4.2 +0.1 -0.2 3.00.3 12.7 min. 2.00.1 0.20.05
2-o0.450.... |
| Description |
GaAs Infrared Light Emitting Diode
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| File Size |
43.76K /
3 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LN65
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| OCR Text |
...nfrared light emission close to monochromatic light : P = 950 nm (typ.)
12.5 min. 10.0 min.
2.8 1.8 1.0
4.80.3 2.4 2.4
2-0.980.2 2-0.450.15 0.450.15
2.54 R1.75
Not soldered
4.20.3 2.3 1.9
1.2
Absolute Maximum Rati... |
| Description |
GaAs Infrared Light Emitting Diode
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| File Size |
43.61K /
3 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
LNA4501F
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| OCR Text |
...es
Red light emission close to monochromatic light : P = 680 nm High-power output, high-efficiency : PO = 3 mW High coupling characteristics and suits to a plastic fiber High-speed response : -3dB modulation of 10 MHz Flat resin package : ... |
| Description |
GaAlAs Red Light Emitting Diode
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| File Size |
40.30K /
2 Page |
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it Online |
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