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  necs Datasheet PDF File

For necs Found Datasheets File :: 64    Search Time::2.828ms    
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    NEC Corp.
Part No. PD70P3002GC-25-7EA
OCR Text necs v850 ? family and targets low-power designs with large embedded code. the device has nearly three times the on-chip memory of the v851 ? (90k versus 32k of rom and 3k versus 1k of ram). many versions of the v850 core are available as p...
Description 32 Bit RISC Microcontrollers(32位RISC微控制器)

File Size 31.07K  /  2 Page

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    NESG2021M05 NESG2021M05-T1-A

CEL[California Eastern Labs]
Part No. NESG2021M05 NESG2021M05-T1-A
OCR Text ...NESG2021M05 is fabricated using necs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. necs low profile, flat lead st...
Description necs NPN SiGe HIGH FREQUENCY TRANSISTOR

File Size 501.56K  /  14 Page

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    California Eastern Laboratories, Inc.
Part No. NX6406 NX6406GH-AZ NX6406GK-AZ
OCR Text necs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6406 SERIES FOR FTTH PON APPLICATIONS FEATURES * OPTICAL OUTPUT POWER: PO = 5.0 mW * LOW THRESHOLD CURRENT : ITH = 10 mA * DIFFERENTIAL EFFICIENCY: d = 0.3 W/A * WIDE OPERATING TEM...
Description necs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS 邻舍1490纳米InGaAsP多量子阱激光器激光二极管能为光纤到户无源光网络应用工具包

File Size 309.34K  /  5 Page

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    NEC Corp.
NEC, Corp.
Part No. PD70F3017YS2-17-YJC PD70F3017S2-17-YJC PD70F3015YGC-17-8ED UPD70F3015YGC-17-8EU
OCR Text necs v850 ? family. fabricated using necs 0.35-micron process technology, the device offers 256k on-chip flash memory and delivers 19 dhrystone mips performance at 3 volts. an integrated subclock allows 90 w power consumption at 32 khz. th...
Description 32-BIT, MROM, 17 MHz, RISC MICROCONTROLLER, PQFP100 14 X 14 MM, FINE PITCH, PLASTIC, LQFP-100
32 Bit RISC Microcontrollers(32位RISC微控制器) 32位RISC微控制器32位的RISC微控制器

File Size 25.62K  /  2 Page

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    R110G-1E

NEC
Part No. R110G-1E
OCR Text ...rver helps to cut costs through necs cooling technology that enables operation in temperatures as high as 40 degrees celsius (104 degree fahrenheit). simplicity and reliability the express5800/r110g-1e, a single socket 1u rack server bui...
Description The right-sized network infrastructure server

File Size 868.04K  /  2 Page

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    NEC, Corp.
Part No. PD703003GC-25
OCR Text necs v850 ? family. with 128k of on-chip, single-cycle flash memory, designers have the flexibility to perform in-system programming of devices, decreasing product development upgrade cycles. the v853 microcontroller provides a wide array o...
Description 32 Bit RISC Microcontrollers(32位RISC微控制器) 32位RISC微控制器2位的RISC微控制器

File Size 31.85K  /  2 Page

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    S3C3410X

Samsung semiconductor
Part No. S3C3410X
OCR Text ...bout A[23:0], D[15:0], nCS[7:0] necs[1:0], nWAIT and nWREXP, are changed and the content of RP[7:0] are added. S3C3410X User's Manual reference: Table 1-3, page 1-11 2) The following errata should be corrected: RXD URXD, TXD UTXD, SIOCK[1...
Description 8/16bit Timer,UART,SPI,IIC,Cache(4KB),10bit ADC
16-Bit CMOS Microcontrollers

File Size 1,688.79K  /  314 Page

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    NEC Corp.
Part No. UPD30121S1-131-3C PD441000L-X UPD30121S1-168-3C
OCR Text necs v r series tm devices created for windows ? ce embedded consumer applications. designed around the mips ? risc architecture developed by mips technologies, the v r 4121 offers excellent power consumption and performance in a highly int...
Description Microprocessor
1M-Bit CMOS Static RAM(1M 位CMOS 静态RAM)

File Size 53.55K  /  4 Page

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    NEC Corp.
NEC, Corp.
Part No. NE6500379A-T1
OCR Text ...mance uniformity are assured by necs stringent quality and control procedures. features ? high output power : p o (1db) = +35 dbm typ. ? high linear gain : 10 db typ. ? high power added efficiency: 50% typ. @v ds = 6 v, i dset = 500 m...
Description 3W L / S-BAND POWER GaAs MESFET
3W L, S-BAND POWER GaAs MESFET 3W升,S波段功率GaAs MESFET

File Size 87.67K  /  8 Page

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    NEC Corp.
Part No. UPC8139GR-7JH UPC8139GR-7JH-E1
OCR Text ... vco. this low power ic employs necs proprietary bipolar process nesat tm iv (f t = 20 ghz) and also has a built-in power save function, which contributes to lowering power consumption of the rf block. this ic is packaged in a small, thin...
Description DIODE ZENER SINGLE 350mW 5.6Vz 20mA-Izt 0.05 5uA-Ir 3 SOT-23 3K/REEL
DIODE ZENER SINGLE 350mW 6Vz 20mA-Izt 0.05 5uA-Ir 3.5 SOT-23 3K/REEL

File Size 224.88K  /  20 Page

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For necs Found Datasheets File :: 64    Search Time::2.828ms    
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