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p-hemt Datasheet PDF File

For p-hemt Found Datasheets File :: 467 Search Time::2.031ms
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				United Monolithic Semicondu... UMS[United Monolithic Semiconductors] United Monolithic Semiconductors GmbH
Part No.	CHA2093 CHA2093-99F_00 CHA2093-99F/00
OCR Text	.... Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2093 Electrical Characteristics Tamb = +25C, Vd = +4V Id=45mA Symbol Fop G G NF VSWRin VSWRout IP3 P1dB Id Para...
Description	20-30GHz Low Noise Amplifier Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 20 - 30GHz的低噪声放大
File Size	106.09K / 8 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors GmbH UMS[United Monolithic Semiconductors]
Part No.	CHA5093 CHA5093-99F_00 CHA5093-99F/00
OCR Text	.... Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5093 Electrical Characteristics Tamb = +25C, Vd = 6V Symbol Fop G G Is P1dB P03 IP3 PAE VSWRin 22-26GHz Hig...
Description	Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 22 - 26GHz高功率放大器 22-26GHz High Power Amplifier
File Size	158.56K / 8 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	EGN030MK
OCR Text	...urrent Channel Temperature r P im l e Condition RG=15 RG=15 Vp VGDO P3dB d GL Rth a in Rating Limit 50 <6.1 >-2.2 200 120 ...HEMT Output Power vs. Frequency VDS=50V IDS(DC)=200mA Output Power and Drain Efficiency vs. Input P...
Description	High Voltage - High Power GaN-HEMT
File Size	188.40K / 3 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	EGN045MK
OCR Text	...urrent Channel Temperature r P im l e Condition RG=10 RG=10 Vp VGDO P3dB d GL Rth a in Rating Limit 50 <9.7 >-3.6 200 120 ...HEMT Output Power vs. Frequency VDS=50V IDS(DC)=250mA Output Power and Drain Efficiency vs. Input P...
Description	High Voltage - High Power GaN-HEMT
File Size	205.87K / 3 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	EGN21A045I EGN21A045IV
OCR Text	...hannel to Case -1.0 15.0 - r P Symbol VDS IGF IGR Tch im l e Condition RG=10 RG=10 120 Tc=25oC -5 112 -65 to +175 250 a ...HEMT Output Power vs. Frequency VDS=50V, IDS=250mA 48 46 44 42 40 38 36 2.04 2.06 2.08 2.1 2.12 2.1...
Description	High Voltage - High Power GaN-HEMT
File Size	226.74K / 4 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	SW-438 SW-438TR-3000 SW-438SMB
OCR Text	...g a 0.5 micron gate length GaAs p-hemt process. The process features full passivation for increased performance and reliability. RF1 GND RF2 RF1 GND RF2 PIN 1 2.4 GHz Application C=8pF C=8pF PIN 1 Broad Band Applications C39pF C 39...
Description	GaAs SPDT Switch DC. 3.0 GHz
File Size	83.69K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies A... ETC INFINEON[Infineon Technologies AG]
Part No.	CFH800
OCR Text	P - HEMT Preliminary Datasheet Features * Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications (F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz) Low cost miniature package...
Description	Typical Common Source S - Parameters
File Size	71.94K / 7 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	EMC21L1004 EMC21L1004GN
OCR Text	...ting Item Symbol Vdd1,2 Vgg1,2 P in Tstg T op DC Input Voltage (Drain) DC Input Voltage (Gate) Input Power Storage Temperature Operating...HEMT Power Amplifier Module Output Power and Drain Efficiency vs. Input Power Vdd1,2=50V Vgg1,2=-3....
Description	High Voltage - High Power GaN-HEMT Power Amplifier Module
File Size	188.71K / 4 Page	View it Online	Download Datasheet

				UMS[United Monolithic Semiconductors]
Part No.	CHA3092RBF CHA3092RBF_24 CHA3092RBF/24
OCR Text	...= 20dB (typical) Output power (P-1dB): 19dBm (typical) Return loss < -6dB Low DC power consumption, 300mA SMD leadless package Dimensions: 5.08 x 5.08 x 0.97 mm3 SMD Package Dimensions "Please note that PIN 1 is located in the lo...
Description	20-33GHz Medium Power Amplifier
File Size	186.34K / 8 Page	View it Online	Download Datasheet

				UMS[United Monolithic Semiconductors]
Part No.	CHA3092 CHA3092-99F_00 CHA3092-99F/00
OCR Text	.... Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3092 20-33GHz Medium Power Amplifier Electrical Characteristics for Broadband Operation Tamb = +25C, Vd1,2...
Description	Circular Connector; No. of Contacts:6; Series:TVS06; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:23; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:23-6 20-33GHz Medium Power Amplifier
File Size	110.97K / 7 Page	View it Online	Download Datasheet

For p-hemt Found Datasheets File :: 467 Search Time::2.031ms
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