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United Monolithic Semiconductors GmbH UMS[United Monolithic Semiconductors]
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Part No. |
CHA5093 CHA5093-99F_00 CHA5093-99F/00
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OCR Text |
....
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5093
Electrical Characteristics
Tamb = +25C, Vd = 6V Symbol
Fop G G Is P1dB P03 IP3 PAE VSWRin
22-26GHz Hig... |
Description |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 22 - 26GHz高功率放大器 22-26GHz High Power Amplifier
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File Size |
158.56K /
8 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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Part No. |
EGN030MK
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OCR Text |
...urrent Channel Temperature
r P
im l e
Condition
RG=15 RG=15 Vp VGDO P3dB d GL Rth
a in
Rating Limit
50 <6.1 >-2.2 200
120 ...HEMT
Output Power vs. Frequency VDS=50V IDS(DC)=200mA Output Power and Drain Efficiency vs. Input P... |
Description |
High Voltage - High Power GaN-HEMT
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File Size |
188.40K /
3 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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Part No. |
EGN045MK
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OCR Text |
...urrent Channel Temperature
r P
im l e
Condition
RG=10 RG=10 Vp VGDO P3dB d GL Rth
a in
Rating Limit
50 <9.7 >-3.6 200
120 ...HEMT
Output Power vs. Frequency VDS=50V IDS(DC)=250mA Output Power and Drain Efficiency vs. Input P... |
Description |
High Voltage - High Power GaN-HEMT
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File Size |
205.87K /
3 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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Part No. |
EGN21A045I EGN21A045IV
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OCR Text |
...hannel to Case -1.0 15.0 -
r P
Symbol
VDS IGF IGR Tch
im l e
Condition
RG=10 RG=10
120 Tc=25oC -5 112 -65 to +175 250
a ...HEMT
Output Power vs. Frequency VDS=50V, IDS=250mA 48 46 44 42 40 38 36 2.04 2.06 2.08 2.1 2.12 2.1... |
Description |
High Voltage - High Power GaN-HEMT
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File Size |
226.74K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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Part No. |
EMC21L1004 EMC21L1004GN
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OCR Text |
...ting Item Symbol
Vdd1,2 Vgg1,2 P in Tstg T op
DC Input Voltage (Drain) DC Input Voltage (Gate) Input Power Storage Temperature Operating...HEMT Power Amplifier Module
Output Power and Drain Efficiency vs. Input Power Vdd1,2=50V Vgg1,2=-3.... |
Description |
High Voltage - High Power GaN-HEMT Power Amplifier Module
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File Size |
188.71K /
4 Page |
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it Online |
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Price and Availability
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