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  p-hemt Datasheet PDF File

For p-hemt Found Datasheets File :: 467    Search Time::2.031ms    
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    CHA2093 CHA2093-99F_00 CHA2093-99F/00

United Monolithic Semicondu...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
Part No. CHA2093 CHA2093-99F_00 CHA2093-99F/00
OCR Text .... Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2093 Electrical Characteristics Tamb = +25C, Vd = +4V Id=45mA Symbol Fop G G NF VSWRin VSWRout IP3 P1dB Id Para...
Description 20-30GHz Low Noise Amplifier
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 20 - 30GHz的低噪声放大

File Size 106.09K  /  8 Page

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    United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
Part No. CHA5093 CHA5093-99F_00 CHA5093-99F/00
OCR Text .... Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5093 Electrical Characteristics Tamb = +25C, Vd = 6V Symbol Fop G G Is P1dB P03 IP3 PAE VSWRin 22-26GHz Hig...
Description Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; No. of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 22 - 26GHz高功率放大器
22-26GHz High Power Amplifier

File Size 158.56K  /  8 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. EGN030MK
OCR Text ...urrent Channel Temperature r P im l e Condition RG=15 RG=15 Vp VGDO P3dB d GL Rth a in Rating Limit 50 <6.1 >-2.2 200 120 ...HEMT Output Power vs. Frequency VDS=50V IDS(DC)=200mA Output Power and Drain Efficiency vs. Input P...
Description High Voltage - High Power GaN-HEMT

File Size 188.40K  /  3 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. EGN045MK
OCR Text ...urrent Channel Temperature r P im l e Condition RG=10 RG=10 Vp VGDO P3dB d GL Rth a in Rating Limit 50 <9.7 >-3.6 200 120 ...HEMT Output Power vs. Frequency VDS=50V IDS(DC)=250mA Output Power and Drain Efficiency vs. Input P...
Description High Voltage - High Power GaN-HEMT

File Size 205.87K  /  3 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. EGN21A045I EGN21A045IV
OCR Text ...hannel to Case -1.0 15.0 - r P Symbol VDS IGF IGR Tch im l e Condition RG=10 RG=10 120 Tc=25oC -5 112 -65 to +175 250 a ...HEMT Output Power vs. Frequency VDS=50V, IDS=250mA 48 46 44 42 40 38 36 2.04 2.06 2.08 2.1 2.12 2.1...
Description High Voltage - High Power GaN-HEMT

File Size 226.74K  /  4 Page

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    SW-438 SW-438TR-3000 SW-438SMB

MACOM[Tyco Electronics]
Part No. SW-438 SW-438TR-3000 SW-438SMB
OCR Text ...g a 0.5 micron gate length GaAs p-hemt process. The process features full passivation for increased performance and reliability. RF1 GND RF2 RF1 GND RF2 PIN 1 2.4 GHz Application C=8pF C=8pF PIN 1 Broad Band Applications C39pF C 39...
Description GaAs SPDT Switch DC. 3.0 GHz

File Size 83.69K  /  4 Page

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    CFH800

Infineon Technologies A...
ETC
INFINEON[Infineon Technologies AG]
Part No. CFH800
OCR Text P - HEMT Preliminary Datasheet Features * Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications (F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz) Low cost miniature package...
Description Typical Common Source S - Parameters

File Size 71.94K  /  7 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. EMC21L1004 EMC21L1004GN
OCR Text ...ting Item Symbol Vdd1,2 Vgg1,2 P in Tstg T op DC Input Voltage (Drain) DC Input Voltage (Gate) Input Power Storage Temperature Operating...HEMT Power Amplifier Module Output Power and Drain Efficiency vs. Input Power Vdd1,2=50V Vgg1,2=-3....
Description High Voltage - High Power GaN-HEMT Power Amplifier Module

File Size 188.71K  /  4 Page

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    CHA3092RBF CHA3092RBF_24 CHA3092RBF/24

UMS[United Monolithic Semiconductors]
Part No. CHA3092RBF CHA3092RBF_24 CHA3092RBF/24
OCR Text ...= 20dB (typical) Output power (P-1dB): 19dBm (typical) Return loss < -6dB Low DC power consumption, 300mA SMD leadless package Dimensions: 5.08 x 5.08 x 0.97 mm3 SMD Package Dimensions "Please note that PIN 1 is located in the lo...
Description 20-33GHz Medium Power Amplifier

File Size 186.34K  /  8 Page

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    CHA3092 CHA3092-99F_00 CHA3092-99F/00

UMS[United Monolithic Semiconductors]
Part No. CHA3092 CHA3092-99F_00 CHA3092-99F/00
OCR Text .... Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA3092 20-33GHz Medium Power Amplifier Electrical Characteristics for Broadband Operation Tamb = +25C, Vd1,2...
Description Circular Connector; No. of Contacts:6; Series:TVS06; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:23; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:23-6
20-33GHz Medium Power Amplifier

File Size 110.97K  /  7 Page

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For p-hemt Found Datasheets File :: 467    Search Time::2.031ms    
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