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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM5364005BSWG
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| OCR Text |
...ffer turn off delay from ras t rez 3 13 3 15 ns 6,12 output buffer turn off delay from w t wez 3 13 3 15 ns 6 w to data delay t wed 15 15 ns w pulse width t wpe 5 5 ns ac characteristics (0 c t a 70 c, vcc = 5.0v 10%. see notes 1,... |
| Description |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
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| File Size |
389.50K /
19 Page |
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it Online |
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ST Microelectronics
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| Part No. |
L4969 L4969MD
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| OCR Text |
...5.10 vr_d differential receiver rez to dom threshold v canh -v canl no bus failures (common mode range 5v) -3.25 -2.65 v 5.11 vd_r f differential receiver dom to rec threshold v canh -v canl bus failures (common mode range 5v) 0.4 0.7 1 v... |
| Description |
SYSTEM VOLTAGE REGULATOR WITH FAULT TOLERANT LOW SPEED CAN-TRANSCEIVER
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| File Size |
294.97K /
30 Page |
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it Online |
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ST Microelectronics
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| Part No. |
L4969D013TR L4969013TR
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| OCR Text |
...t ddr propagation delay (dom to rez state) c load = 3.3nf, r term =100 w 0.4 1.0 2.0 m s s rd bus output slew rate (r -> d) 10% ... 90% c load = 3.3nf 458v/ m s r rth , r rtl external termination resistance (application limit) 0.5 16 k... |
| Description |
SYSTEM VOLTAGE REGULATOR WITH FAULT TOLERANT LOW SPEED CAN-TRANSCEIVER
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| File Size |
342.74K /
34 Page |
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it Online |
Download Datasheet |
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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
MSM51V16165F-50TS-K MSM51V16165F-60TS-K MSM51V16165F-70TS-K
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| OCR Text |
...buffer turn- off delay time t rez 0 13 0 15 0 20 ns 7,8 oe to data output buffer turn-off delay time t oez 0 13 0 15 0 20 ns 7 we to data output buffer turn- off delay time t wez 0 13 0 15 0 20 ns 7 transition time t t 1 50... |
| Description |
1,048,576-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
1,048,576-Word ??16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
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| File Size |
231.36K /
16 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM44C1005D
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| OCR Text |
...turn off delay time from ras t rez 3 15 3 15 3 20 ns 6,13 output buffer turn off delay time from w t wez 3 13 3 13 3 18 ns 6,13 w to data delay t wed 13 13 18 ns oe to cas hold time t och 5 5 5 ns cas hold time to oe t cho 5 5 5 ns ... |
| Description |
1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOSCAS 动态RAM(带扩展数据输)
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| File Size |
394.90K /
21 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM5368005BSW
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| OCR Text |
...ffer turn off delay from ras t rez 3 13 3 15 ns 6,12 output buffer turn off delay from w t wez 3 13 3 15 ns 6 w to data delay t wed 15 15 ns w pulse width t wpe 5 5 ns ac characteristics (0 c t a 70 c, vcc=5.0v 10%. see notes 1,2.... |
| Description |
8M x 36 DRAM SIMM(8M x 36 动RAM模块)
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| File Size |
393.31K /
19 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4E641611D-TC50 K4E661611D-TC50 K4E641611D-TC60 K4E661611D-TC60
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| OCR Text |
...ffer turn off delay from ras t rez 3 13 3 13 ns 6,21 output buffer turn off delay from w t wez 3 13 3 13 ns 6 w to data delay t wed 15 15 ns oe to cas hold time t och 5 5 ns cas hold time to oe t cho 5 5 ns oe precharge time t oep ... |
| Description |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
4M X 16 EDO DRAM, 50 ns, PDSO50
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| File Size |
889.14K /
36 Page |
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it Online |
Download Datasheet |
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