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  rpc-1.00 Datasheet PDF File

For rpc-1.00 Found Datasheets File :: 81    Search Time::2.062ms    
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    TE Connectivity, Ltd.
Part No. HY5116404CSLT-50 HY5116404CSLT-60 HY5116404CSLJ-50 HY5116404CSLJ-70 HY5116404CSLJ-60 HY5116404CJ-70
OCR Text ...t cwd t rwd t awd t csr t chr t rpc t cpt t roh t oea t oed t oez t oeh t cpwd t rhcp t wrp t wrh t rass 0 - - - 0 30 67 42 5 10 5 15 10 - 1...1`s or `0`s), the dq pin indicates a `1`. if they are not equal, the dq indicates a `0`. the 4mx4 dr...
Description x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM

File Size 125.98K  /  9 Page

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    Alpha Wire Company
Part No. HY5117804CSLT-80 HY5117804CT-60 HY5117804CJ-80 HY5117804CSLT-60 HY5117804CSLT-70 HY5117804CT-70 HY5117804CJ-60 HY5117804CSLJ-60 HY5117804CJ-70 HY5117804CSLJ-70 HY5117804CT-80 HY5117804CSLJ-80 HY5116804CSLJ-60
OCR Text ...t cwd t rwd t awd t csr t chr t rpc t cpt t roh t oea t oed t oez t oeh t cpwd t rhcp t wrp t wrh t rass 0 10 - - - 0 37 80 50 5 10 5 30 10 ...1. an initial pause of 200 m s is required after power-up followed by 8 /ras only refresh cycles ...
Description x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM

File Size 104.30K  /  8 Page

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    MSM51V18160F

OKI electronic componets
Part No. MSM51V18160F
OCR Text ...delay time from ras precharge t rpc 5 ? 5 ? 5 ? ns 11 ras to cas set-up time (cas before ras) t csr 10 ? 10 ? 10 ? ns 11 ras to cas hold tim...1. a start-up delay of 200 m s is required after power-up, followed by a minimum of eight initializa...
Description 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

File Size 179.07K  /  15 Page

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    Integrated Silicon Solution, Inc.
Part No. IS41C44002-50TI IS41LV44002-50T IS41C44004-50T IS41LV44004-50TI
OCR Text ... ras lead time 25 ? 30 ? ns t rpc ras to cas precharge time 5 ? 5 ? ns t rsh ras hold time 8 ? 10 ? ns t rhcp ras hold time from cas...1-800-379-4774 7 rev. c 09/29/00 is41c4400 x is41lv4400 x s eries issi ? ac characteristics (con...
Description 4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 带扩展数据输出页模式动态RAM(刷新 2K 4米4的DRAM与江户页面模式(3.3伏,4米4带扩展数据输出页模式动态随机存储器(刷k)的
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM

File Size 159.87K  /  19 Page

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    Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
Part No. IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS41C82002-50J
OCR Text ...to ras lead time 25 30 ns t rpc ras to cas precharge time 5 5 ns t rsh ras hold time 8 10 ns t rhcp ras hold time from cas pr...1-800-379-4774 7 rev. a 12/19/00 is41c82002 is41lv82002 issi ? ac characteristics (continued) (1,...
Description x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28

File Size 187.18K  /  18 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM5116400D-60 MSM5116400D-50TS-K MSM5116400D-60SJ MSM5116400D-50SJ
OCR Text ...delay time from ras precharge t rpc 5 ? 5 ? 5 ? ns ras to cas set-up time (cas before ras) t csr 10 ? 10 ? 10 ? ns ras to cas hold time (cas...1. a start-up delay of 200 m s is required after power-up, followed by a minimum of eight initializa...
Description 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304字4位动态随机存储器:快速页面模式型

File Size 162.98K  /  14 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM5116400F-XXSJ MSM5116400F-XXTS-K MSM5116400F-70SJ MSM5116400F-50SJ
OCR Text ...elay time from ras precharge t rpc 5 ? 5 ? 5 ? ns ras to cas set-up time ( cas before ras ) t csr 10 ? 10 ? 10 ? ns ras to cas hold...1 semiconductor msm5116400f 8/15 notes: 1. a start-up delay of 200 s is required after power-up, fo...
Description 4,194,304-Word 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304词位动态随机存储器:快速页面模式型

File Size 232.63K  /  15 Page

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