...tary to 2SD1252 and 2SD1252A
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector ...P 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank cl...
Description
Silicon PNP epitaxial planar type(For power amplification)
...tary to 2SD1253 and 2SD1253A
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity Low collector ...P 120 to 250
Rank hFE1
1
Power Transistors
PC -- Ta
50 -6 (1) TC=Ta (2) With a 50 x 50 x ...
Description
Silicon PNP epitaxial planar type(For power amplification)
...5 3.40.3
Unit: mm
1.00.1
s Features
q q q q
1.50.1
1.5max.
1.1max.
Low collector to emitter saturation voltage VCE(sat) ...P 130 to 260
Rank hFE2
4.40.5
14.70.5
V
10.00.3
V
+0.4
+0
1
Power Tran...
Description
Silicon PNP epitaxial planar type(For power switching)
...5 3.40.3
Unit: mm
1.00.1
s Features
q q q q
1.50.1
1.5max.
1.1max.
Low collector to emitter saturation voltage VCE(sat) ...P 130 to 260
Rank hFE2
4.40.5
14.70.5
V
10.00.3
V
+0.4
+0
1
Power Tran...
Description
Silicon PNP epitaxial planar type(For power switching)
...5 3.40.3
Unit: mm
1.00.1
s Features
q q q q
1.50.1
1.5max.
1.1max.
Low collector to emitter saturation voltage VCE(sat) ...P 130 to 260
Rank hFE2
4.40.5
14.70.5
V
10.00.3
V
+0.4
+0
1
Power Tran...
Description
Silicon PNP epitaxial planar type(For power switching)
...5 3.40.3
Unit: mm
1.00.1
s Features
q q q q
1.50.1
1.5max.
1.1max.
Low collector to emitter saturation voltage VCE(sat) ...P 130 to 260
Rank hFE2
4.40.5
14.70.5
V
10.00.3
V
+0.4
+0
1
Power Tran...
...5 3.40.3
Unit: mm
1.00.1
s Features
q q q
Low collector to emitter saturation voltage VCE(sat) High-speed switching N type packag...P 130 to 260
Rank hFE2
3.0-0.2
+0.4
+0
1
Power Transistors
PC -- Ta
50 -12 (1) T...
...5 3.40.3
Unit: mm
1.00.1
s Features
q q q
Low collector to emitter saturation voltage VCE(sat) High-speed switching N type packag...P 130 to 260
Rank hFE2
3.0-0.2
+0.4
+0
1
Power Transistors
PC -- Ta
50 -12 (1) T...
...-55 to +150 Unit V
1.50.1
s Features
1.5max.
10.5min. 2.0
1.1max.
0.80.1
0.5max.
s Absolute Maximum Ratings
Parameter...P 2000 to 5000 4000 to 10000
Internal Connection
B
Rank hFE2
E
1
Power Transistors
...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
...-55 to +150 Unit V
1.50.1
s Features
1.5max.
10.5min. 2.0
1.1max.
0.80.1
0.5max.
s Absolute Maximum Ratings
Parameter...P 2000 to 5000 4000 to 10000
Internal Connection
B
Rank hFE2
E
1
Power Transistors
...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)