...n a multiple bus microprocessor system. AMD's CMOS process technology provides high speed, low power, and high noise immunity. Typical power...memory is verified at VCC = VPP = 5.25 V. Please refer to Section 5 of the EPROM Products Data Book ...
Description
2 Megabit (256 K x 8-Bit) CMOS EPROM Octal bus transceivers 20-SSOP 0 to 70 Octal Buffers And Line Drivers With 3-State Outputs 20-SO 0 to 70 2兆位56亩8位)的CMOS存储 2 Megabit (256 K x 8-Bit) CMOS EPROM 256K X 8 UVPROM, 55 ns, CDIP32 Octal Buffers And Line Drivers With 3-State Outputs 20-SOIC 0 to 70 2兆位56亩8位)的CMOS存储 Octal bus transceivers 20-SOIC 0 to 70 256K X 8 OTPROM, 55 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS EPROM 2兆位256亩8位)的CMOS存储 BCD-To-Seven-Segment Decoders/Drivers 16-SOIC 0 to 70 2兆位256亩8位)的CMOS存储 2 Megabit (256 K x 8-Bit) CMOS EPROM 2兆位56亩8位)的CMOS存储 Octal Buffers And Line Drivers With 3-State Outputs 20-PDIP 0 to 70 Octal Buffers And Line Drivers With 3-State Outputs 20-SSOP 0 to 70 RES 1.5K-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 megabit CMOS EPROM
...o be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F010A is erased when shipped from the factory. The standard...memory contents even after 100,000 erase and program cycles. The AMD cell is designed to optimize th...
Description
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash memory with Embedded Algorithms 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash memory with Embedded Algorithms
...o be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F010 is erased when shipped from the factory. The standard ...memory contents even after 10,000 erase and program cycles. The AMD cell is designed to optimize the...
Description
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash memory
...o be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F256 is erased when shipped from the factory. The standard ...memory
Valid Combinations AM28F256-70 AM28F256-90 AM28F256-120 AM28F256-150 AM28F256-200 PC, PI, ...
Description
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash memory
...e operation for the life of the system s Embedded Algorithms -- Embedded Erase algorithm automatically preprograms and erases the entire chi...memory device, organized as 2,097,152 words of 16 bits each. This device uses a single VCC of 1.7 to...
Description
From old datasheet system 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash memory
...s Read/Write operations -- Host system can program or erase in one bank, then immediately and simultaneously read from the other bank -- Zer...memory device, organized as 262,144 words or 524,288 bytes. The device is offered in 44-pin SO and 4...
Description
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only/ Simultaneous Operation Flash memory 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Simultaneous Operation Flash memory 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash memory
...sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously loc...memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 44-pin SO and 48-pin ...
Description
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash memory
...sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously loc...memory device organized as 131,072 bytes. The Am29LV001B has a boot sector architecture. The device ...
Description
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory
...sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously loc...memory organized as 262,144 bytes or 131,072 words. The device is offered in 44-pin SO and 48-pin TS...
Description
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory 256K X 8 FLASH 3V PROM, 80 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory 128K X 16 FLASH 3V PROM, 90 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory 2兆位256Kx8Bit/128Kx16位).0伏的CMOS引导扇区闪存 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash memory 2兆位56Kx8Bit/128Kx16位).0伏的CMOS引导扇区闪存