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045CT F0919 SD101 01907 MQ1120 45422 10N20 A4899
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  tcase Datasheet PDF File

For tcase Found Datasheets File :: 7822    Search Time::0.938ms    
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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ... ELECTRICAL CHARACTERISTICS (tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 100 1 10 100 Typ. Max. Unit V A A nA V DS = ...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text ... ELECTRICAL CHARACTERISTICS (tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VGS = 0 Min. 600 1 10 100 Typ. Max. Unit V A A nA Zero Gate...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    IRF9130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9130SMD
OCR Text ...d) ABSOLUTE MAXIMUM RATINGS (tcase = 25C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RqJC Gate - Source Voltage Continuous Drain Current @ tcase = 25C Continuous Drain Current @ tcase = 100C Pulsed Drain Current Power Dissipatio...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 20.44K  /  2 Page

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    IRF9140

SEMELAB LTD
SEME-LAB[Seme LAB]
Part No. IRF9140
OCR Text ...in ABSOLUTE MAXIMUM RATINGS (tcase = 25C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 12.07 (0.475) 11.30 (0....
Description P-CHANNEL POWER MOSFET

File Size 21.26K  /  2 Page

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    IRF9240 IRF9240-SMD

TT electronics Semelab Limited
International Rectifier
SEME-LAB[Seme LAB]
Part No. IRF9240 IRF9240-SMD
OCR Text ...ge ABSOLUTE MAXIMUM RATINGS (tcase = 25C unless otherwise stated) VDSS VDGR VGS ID IDM PD ILM Tj Tstg Semelab plc. Drain - Source Voltage Drain - Gate Voltage (RGS = 20KW) Gate - Source Voltage Continuous Drain Current @ tcase = 25C @ T...
Description CAP CER 250VAC 150PF X7R 1808
P-CHANNEL POWER MOSFET

File Size 25.33K  /  2 Page

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    IRF9530-220M

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF9530-220M
OCR Text ...SE ABSOLUTE MAXIMUM RATINGS (tcase = 25C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RqJC RqJA Gate - Source Voltage Continuous Drain Current @ tcase = 25C Continuous Drain Current @ tcase = 100C Pulsed Drain Current Power Dissi...
Description P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 18.21K  /  2 Page

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    IRF9530S IRF9530SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9530S IRF9530SMD
OCR Text ...SE ABSOLUTE MAXIMUM RATINGS (tcase = 25C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RqJC Gate - Source Voltage Continuous Drain Current @ tcase = 25C Continuous Drain Current @ tcase = 100C Pulsed Drain Current Power Dissipatio...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 22.38K  /  2 Page

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    PGT20405

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PGT20405
OCR Text ...e Operating chip temperature tcase TOp 0 20 70 35 C C Absolute Maximum Ratings Parameter Symbol Min Max Unit Storage temperature Laser forward current Modulator voltage TStg ILD VMod -40 -4 85 150 1 C mA V ...
Description DFB/EA Laser Module for 10 Gb/s Applications

File Size 296.66K  /  4 Page

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    PN2907A-AP PN2907A

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
Part No. PN2907A-AP PN2907A
OCR Text ... ELECTRICAL CHARACTERISTICS (tcase = 25 oC unless otherwise specified) Symbol I CEX I BEX I CBO Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 V) Collector Cut-off Current (I E = 0) Test Conditions V C...
Description SMALL SIGNAL PNP TRANSISTOR
SMALL SIGNAL PNP TRANSISTOR

File Size 60.47K  /  5 Page

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    STB75NF75L STB75NF75L-1 STP75NF75L P75NF STB75NF75LT4

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
Part No. STB75NF75L STB75NF75L-1 STP75NF75L P75NF STB75NF75LT4
OCR Text ... ELECTRICAL CHARACTERISTICS (tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 2...
Description N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET
N-CHANNEL 75V - 0.009 OHM - 75A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET⑩ II POWER MOSFET
N-CHANNEL MOSFET
N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFETII POWER MOSFET
75 A, 75 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA

File Size 381.01K  /  11 Page

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