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  toshiba insulated gate bipolar Datasheet PDF File

For toshiba insulated gate bipolar Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IRGP420U GP420U

International Rectifier, Corp.
Part No. IRGP420U GP420U
Description insulated gate bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
insulated gate bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管)

File Size 108.14K  /  7 Page

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    IRG4PC30W IRG4PC30WPBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PC30W IRG4PC30WPBF
Description insulated gate bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管
insulated gate bipolar TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package

File Size 122.11K  /  8 Page

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    IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15

International Rectifier
Part No. IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15
Description insulated gate bipolar TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
   insulated gate bipolar TRANSISTOR

File Size 647.10K  /  10 Page

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    ONSEMI[ON Semiconductor]
Part No. MGW12N120
Description insulated gate bipolar Transistor N-Channel
insulated gate bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE

File Size 133.06K  /  5 Page

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    IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15

International Rectifier
Part No. IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15
Description 55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
insulated gate bipolar TRANSISTOR
   insulated gate bipolar TRANSISTOR

File Size 367.67K  /  10 Page

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    IRG4BC29F IRG4BC30F IRG4BC30

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4BC29F IRG4BC30F IRG4BC30
Description 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
insulated gate bipolar TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
insulated gate bipolar TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)

File Size 164.74K  /  8 Page

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    IRG4PH40U

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40U
Description 41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
insulated gate bipolar TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
insulated gate bipolar TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
insulated gate bipolar TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package

File Size 160.52K  /  8 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT90AM-18
Description Integrated gate bipolar Transistor (IGBT) Modules: 250V
insulated gate bipolar TRANSISTOR

File Size 22.58K  /  2 Page

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    IRF[International Rectifier]
Part No. IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30KD-STRL
Description 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
insulated gate bipolar TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
insulated gate bipolar TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

File Size 223.21K  /  10 Page

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    MGP4N60E-D

ON Semiconductor
Part No. MGP4N60E-D
Description insulated gate bipolar Transistor N-Channel Enhancement-Mode Silicon gate

File Size 108.35K  /  6 Page

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For toshiba insulated gate bipolar Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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