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				Alpha & Omega Semiconductors
Part No.	AO4800C
OCR Text	... (at v gs = 2.5v) < 50m w 100% uis tested 100% r g tested symbol v ds drain-source voltage 30 the ao4800 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient sw...
Description	30V Dual N-Channel MOSFET
File Size	565.97K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4803A AO4803A11
OCR Text	...(at v gs = -4.5v) < 74m w 100% uis tested 100% r g tested symbol the ao4803a uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is suitable for use as a load switch or in p wm applications. m...
Description	30V Dual P-Channel MOSFET
File Size	607.58K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors Alpha & Omega Semiconductor...
Part No.	AO4803 AO4803-11
OCR Text	...(at v gs = -4.5v) < 87m w 100% uis tested 100% r g tested symbol the ao4803 uses advanced trench technology to provi de excellent r ds(on) with low gate charge. this device is suitable for use as a load switch or in pwm applica tions. m...
Description	30V Dual P-Channel MOSFET
File Size	607.87K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductor
Part No.	AOL1404G
OCR Text	....5v) < 6m applications 100% uis tested 100% rg tested symbol v ds v gs i dm i as avalanche energy l=0.1mh c e as t j , t stg symbol t 10s steady-state steady-state r q jc ? dc/dc converters in computing, servers, and pol ...
Description	Single LV MOSFETs (12V - 30V)
File Size	336.48K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOD603A
OCR Text	... < 150m (v gs =-4.5v) 100% uis tested 100% uis tested 100% r g tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc symbol t 10s steady-state steady-...
Description	60V Complementary MOSFET
File Size	390.04K / 11 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors Alpha & Omega Semicondu...
Part No.	AOI4185 AOD418512
OCR Text	...on) < 20m w (v gs = -4.5v) 100% uis tested! 100% rg tested! general description the aod4185/aoi4185 uses advanced trench technology to provide excellent r ds(on) and low gate charge. with the excellent thermal resistance of the dpak/ipa...
Description	P-Channel Enhancement Mode Field Effect Transistor
File Size	267.09K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4832 AO483211
OCR Text	... (at v gs =4.5v) < 17.5m w 100% uis tested 100% r g tested symbol v ds the ao4832 uses advanced trench technology to provi de excellent r ds(on) with low gate charge. this device is suitable for high side switch in smp s and general purp...
Description	30V Dual N-Channel MOSFET
File Size	543.43K / 6 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	RF1K49092 FN3968
OCR Text	... Current vs Pulse Width Curve * uis Rating Curve * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RF1K49092 PACKAGE MS-012AA BRAND RF1K49092 Symbol D1 (8)...
Description	3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET From old datasheet system 3.5A/2.5A 12V 0.050/0.130 Ohm Logic Level Complementary LittleFET Power MOSFET 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET
File Size	247.40K / 13 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4838
OCR Text	...) (at v gs =4.5v) < 13m w 100% uis tested 100% r g tested symbol v ds absolute maximum ratings t a =25c unless otherwise noted 30v drain-source voltage 30 the ao4838 combines advanced trench mosfet technology with a low resistance packa...
Description	30V Dual N-Channel MOSFET
File Size	595.12K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4411 AO441111
OCR Text	...(at v gs = -4.5v) < 55m w 100% uis tested 100% r g tested symbol v ds drain-source voltage -30 the ao4411 uses advanced trench technology to provi de excellent r ds(on) , and ultra-low low gate charge. this device is suitable for use as ...
Description	30V P-Channel MOSFET
File Size	605.86K / 6 Page	View it Online	Download Datasheet

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