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  vgdo Datasheet PDF File

For vgdo Found Datasheets File :: 363    Search Time::5.609ms    
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    PMBFJ108 PMBFJ109 PMBFJ110

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PMBFJ108 PMBFJ109 PMBFJ110
OCR Text ...stem (IEC 134). SYMBOL VDS VGSO vgdo IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain-drain voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature Tamb = 25C; not...
Description N-channel junction FETs

File Size 36.22K  /  6 Page

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    PMBFJ111 PMBFJ112 PMBFJ113

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PMBFJ111 PMBFJ112 PMBFJ113
OCR Text ...stem (IEC 134). SYMBOL VDS VGSO vgdo IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain-drain voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature Tamb = 25 C; no...
Description N-channel junction FETs

File Size 36.45K  /  6 Page

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    PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177
OCR Text ...tot Tstg Tj max. max. VDS VGSO vgdo -IG max. max. max. max. PMBFJ174 to 177 30 30 30 50 300 -65 to + 150 150 V V V mA mW C C 430 K/W PMBFJ174 Gate cut-off current VGS = 20 V; VDS = 0 Drain cut-off current -VDS = 15 V; VGS...
Description P-channel silicon field-effect transistors

File Size 34.20K  /  6 Page

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    Sanyo
Part No. 2SK1578
OCR Text ...ture Storage Temperature Symbol vgdo IG ID PD Tj Tstg Conditions 3.0 3.8nom 1 : Source 2 : Gate 3 : Drain SANYO : SPA 0.7 0.7 Ratings -20 10 1 100 150 -55 to +150 Unit V mA mA mW C C Electrical Characteristics at Ta = ...
Description N-Channel Junction FET Capacitor Microphone Applications
N-Channel Silicon MOSFET

File Size 119.01K  /  4 Page

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    MGF1601B 1601B

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF1601B 1601B
OCR Text ...AXIMUM RATINGS (Ta=25C) Symbol vgdo VGSO ID IGR IGF PT Tch Tstg *1:TC=25C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storag...
Description From old datasheet system
MICROWAVE POWER GaAs FET

File Size 25.18K  /  3 Page

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    PN4416 PN4416A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PN4416 PN4416A
OCR Text ...e-source voltage PN4416 PN4416A vgdo gate-drain voltage PN4416 PN4416A IG Ptot Tstg Tj DC forward gate current total power dissipation storage temperature junction temperature up to Tamb = 25 C (note 1) - - - - - - - - CONDITIONS PN4416;...
Description N-channel field-effect transistor

File Size 95.53K  /  9 Page

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    MGF0909A MGF0909 0909A

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0909A MGF0909 0909A
OCR Text ...M RATINGS (Ta=25C) Symbol VGSO vgdo ID IGR IGF PT Tch Tstg *1:TC=25C Parameter Gate to source voltage Gate to drain voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage tem...
Description MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system

File Size 22.09K  /  3 Page

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    2SK1842

Panasonic Semiconductor
Part No. 2SK1842
OCR Text ...in 30 -40 typ 0 to 0.1 vgdo -40 V 0.1 to 0.3 0.40.2 0.8 Parameter Symbol Ratings Unit +0.2 1.1 -0.1 max 200 - 0.5 0.16 -0.06 +0.1 s Absolute Maximum Ratings (Ta = 25C) 1.45 Unit A nA V ...
Description Silicon N-Channel Junction FET

File Size 31.15K  /  2 Page

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    2SK217

Hitachi Semiconductor
Part No. 2SK217
OCR Text ...ture Storage temperature Symbol vgdo ID IG Pch Tch Tstg Ratings -30 20 10 150 150 -55 to +150 Unit V mA mA mW C C Electrical Characteristics (Ta = 25C) Item Gate to drain breakdown voltage Gate cutoff current Gate to source cutoff volta...
Description Silicon N-Channel Junction FET

File Size 35.29K  /  7 Page

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    hitachi
Part No. 2SK168
OCR Text ...ture Storage temperature Symbol vgdo VGSS IG ID Pch Tch Tstg Ratings -30 -1 10 20 200 150 -55 to +150 Unit V V mA mA mW C C Electrical Characteristics (Ta = 25C) Item Gate to drain breakdown voltage Gate cutoff current Drain current Gat...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 50.67K  /  7 Page

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For vgdo Found Datasheets File :: 363    Search Time::5.609ms    
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