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  -50v -3a Datasheet PDF File

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    IRF7555

International Rectifier
Part No. IRF7555
OCR Text ...irf.com IRF7555 100 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 100 -I D , Drain-to-Source Current (A)...3A TJ = 25 C RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source C...
Description HEXFET? Power MOSFET
Power MOSFET(Vdss=-20V, Rds(on)=0.055ohm)

File Size 70.41K  /  7 Page

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    Cal-Chip Electronics
Part No. RM06F1302CT RM06F1102CT RM06F1000CT RM06F1003CT RM06F1002CT RM06F1004CT
OCR Text ...10m rm02 1/20w refer 5.2 25v 50v +600 -200 1-9.1 o thick film chip resistors type rated current max overload current ...3a max. 3a max. 3a max. body length (l) 0.39+.004/-.002 (1.0+0.10/-0.05) .063?004 (1.60?.10) .078?00...
Description RESISTOR, 13K, 1/10W, 1%, 603 RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 13000 ohm, SURFACE MOUNT, 0603
RES,11.0K,1/16W,1%,THICKFILM,0603 RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 11000 ohm, SURFACE MOUNT, 0603
RES,SMD,100 OHMS,1%,0.125W,R0603 RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0603
RES,100K,1/16W,1%,THICKFILM,0603 RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 100000 ohm, SURFACE MOUNT, 0603
10 KOHM 1/16W 1% 200 PPM SMD, 0603 RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 10000 ohm, SURFACE MOUNT, 0603
1M 1% 1/16W 0603 RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 1000000 ohm, SURFACE MOUNT, 0603

File Size 315.38K  /  5 Page

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    IRHQ6110 IRHQ63110

HIROSE ELECTRIC Co., Ltd.
International Rectifier
Part No. IRHQ6110 IRHQ63110
OCR Text ...-20V VGS = 12V, ID = 3.0A VDS = 50V VDD = 50V, ID = 3.0A, VGS = 12V, RG = 7.5 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate...3A VDS = -50v VDD = -50v, ID = -2.3A, VGS = -12V, RG = 7.5 IGSS IGSS Qg Q gs Q gd td(on) tr td(of...
Description TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC 晶体管| MOSFET的|阵|互补| 100V的五(巴西)直| 3A条(丁)| LLCC
RADIATION HARDENED POWER MOSFET

File Size 198.17K  /  14 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4486
OCR Text ...rs turn-on rise time v =10v, v =50v, r =16.7 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =50v, i d =3.0...3a v gs =4.5v, i d =3a diode forward voltage electrical characteristics (t j =25c unless otherwise n...
Description 100V N-Channel MOSFET

File Size 359.42K  /  6 Page

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    IRLMS2002PBF IRLMS2002TRPBF IRLMS2002PBF-15

International Rectifier
Part No. IRLMS2002PBF IRLMS2002TRPBF IRLMS2002PBF-15
OCR Text ...com IRLMS2002PbF 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V TOP 100 I D , Drain-to-Source Current (A) I D ...3A I D , Drain-to-Source Current (A) 1.5 1.0 0.5 1 1.5 V DS = 15V 20s PULSE WIDTH ...
Description HEXFET Power MOSFET
HEXFETPower MOSFET
Ultra Low On-Resistance

File Size 150.01K  /  8 Page

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    L4975 L4975A

STMicroelectronics
Part No. L4975 L4975A
OCR Text ...Vref to 40V Io = 5A Vi = 15V to 50V Io = 3A; Vo = Vref Vi = 15V to 50V Io = 2A; Vo = Vref Vo = Vref Io = 2A to 4A Io = 1A to 5A Io = 3A Io = 5A Vi = 15 to 50V Vo = Vref to 40V Io = 3A Vo = Vref Vo = 12V Io = 5A Vo = Vref Vo = 12V SVR f f V...
Description 5A SWITCHING REGULATOR

File Size 357.92K  /  21 Page

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    2SK3518-01MR

Fuji Electric
Part No. 2SK3518-01MR
OCR Text ...ec, f=60hz < = *1 l=5.90mh, vcc=50v, see to avalanche energy graph *2 tch 150c = < 2 0246810 0 1 2 3 4 rds(on) [ ? ] id [a] typica...3a,vgs=10v 0 25 50 75 100 125 150 0 10 20 30 40 50 allowable power dissipation pd=f(tc) pd [w] tc [ ...
Description N-CHANNEL SILICON POWER MOSFET

File Size 107.43K  /  4 Page

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    FDS3682

Fairchild Semiconductor
Part No. FDS3682
OCR Text ... 0V to 10V VGS = 0V to 2V VDD = 50V ID = 6A Ig = 1.0mA 1300 190 45 19 2.4 6.0 3.6 4.5 25 3.2 pF pF pF nC nC nC nC nC Resistive Switching ...3A ISD = 6A, dISD/dt =100A/s ISD = 6A, dISD/dt =100A/s 1.25 1.0 50 75 V V ns nC Notes: 1: Startin...
Description N-Channel PowerTrench MOSFET 100V/ 6A/ 35m
N-Channel PowerTrench MOSFET 100V, 6A, 35mз

File Size 208.88K  /  11 Page

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    AO4486

Alpha & Omega Semiconductors
Part No. AO4486
OCR Text ...rs turn-on rise time v =10v, v =50v, r =16.7 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =50v, i d =3.0...3a v gs =4.5v, i d =3a diode forward voltage electrical characteristics (t j =25c unless otherwise n...
Description 100V N-Channel MOSFET

File Size 543.92K  /  6 Page

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    IRF6644TRPBF IRF6644PBF IRF6644TR1PBF

International Rectifier
Part No. IRF6644TRPBF IRF6644PBF IRF6644TR1PBF
OCR Text ...-20V VDS = 10V, ID = 6.2A VDS = 50V V m V mV/C A nA S V/C Reference to 25C, ID = 1mA nC VGS = 10V ID = 6.2A See Fig. 15 VDS = 16...3A VGS = 10V 1.5 1.00 0.10 1.0 VDS = 10V 0.01 3.0 4.0 5.0 60s PULSE WIDTH 6.0 ...
Description    Optimized for Synchronous Rectification
DirectFET Power MOSFET
Ideal for High Performance Isolated Converter Primary Switch Socket

File Size 252.47K  /  10 Page

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