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0.17a Datasheet PDF File

For 0.17a Found Datasheets File :: 1379 Search Time::3.219ms
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				Advanced Power Technology
Part No.	APT6038BFLL APT6038SFLL
OCR Text	0.380W POWER MOS 7TM FREDFET BFLL D3PAK TO-247 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhanceme...17A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.48K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT6038BLL APT6038SLL
OCR Text	0.380W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduct...17A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.86K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA200TD120U
OCR Text	...Weight of Module Typ. -- -- 0.1 -- -- 400 Max. 0.12 0.20 -- 4.0 3.0 -- Units C/W N. m g www.irf.com 1 3/20/98 GA200TD1...17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf ...
Description	HALF-BRIDGE IGBT DOUBLE INT-A-PAK
File Size	295.85K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA400TD60U
OCR Text	...Weight of Module Typ. -- -- 0.1 -- -- 400 Max. 0.10 0.20 -- 6.0 5.0 -- Units C/W N. m g www.irf.com 1 05/15/02 GA400TD...17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf ...
Description	600V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package HALF-BRIDGE IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT
File Size	235.92K / 10 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2934
OCR Text	...Operating Area D Lower RDS(on): 0.254 Typ D Lower Leakage Current: 10A (Max) @ VDS = 400V Absolute Maximum Ratings: Drain-to-Source Voltage,...17A, di/dt 250A/s, VDD V(BR)DSS, Starting TJ = +25C. Electrical Characteristics: (TC = +25C unl...
Description	MOSFET N-Channel, Enhancement Mode High Speed Switch
File Size	23.36K / 3 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2943
OCR Text	.... . . . . . . . . . . . . . . . 0.32W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . ...
Description	MOSFET N-Channel, Enhancement Mode High Speed Switch
File Size	25.27K / 3 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2984
OCR Text	.... . . . . . . . . . . . . . . . 0.40W/C Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....17A, di/dt 140A/s, VDD V(BR)DSS, TJ +175C. Electrical Characteristics: (TC = +25C unless other...
Description	Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch
File Size	24.17K / 3 Page	View it Online	Download Datasheet

				TelCom Semiconductor, Inc. TELCOM[TelCom Semiconductor Inc] TELCOM[TelCom Semiconductor, Inc]
Part No.	TCM809 TCM809LENB TCM809MENB TCM809RENB TCM809SENB TCM809TENB TCM810 TCM810LENB TCM810MENB TCM810RENB TCM810SENB TCM810TENB
OCR Text	... ............................ - 0.3V to (VCC + 0.3V) Input Current, VCC.. ..................................................20mA Output Current, RESET, RESET .............................20mA dV/dt (VCC) .......................................
Description	3-PIN UP RESET MONITORS 3引脚复位监测
File Size	54.90K / 4 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	BSS123-7 BSS123
OCR Text	...ODUCT SOT-23 Dim A D Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1...17A VGS = 4.5V, ID = 0.17a VDS = 10V, ID = 0.17a, f = 1.0KHz VGS = 0V, IS = 0.34A 2. Short durati...
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	65.63K / 3 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	BSS123W BSS123-7
OCR Text	...DUCT SOT-323 Dim A C Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0 Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 ...17A VGS = 4.5V, ID = 0.17a VDS = 10V, ID = 0.17a, f = 1.0KHz VGS = 0V, IS = 0.34A 2. Short durati...
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	64.65K / 3 Page	View it Online	Download Datasheet

For 0.17a Found Datasheets File :: 1379 Search Time::3.219ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |