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  0.7ma Datasheet PDF File

For 0.7ma Found Datasheets File :: 3578    Search Time::3.563ms    
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    2SD638 2SD639

PANASONIC[Panasonic Semiconductor]
Part No. 2SD638 2SD639
OCR Text ...643 and 2SB644 6.90.1 2.50.1 1.0 Unit: mm 2.40.2 2.00.2 3.50.1 q q Low collector to emitter saturation voltage VCE(sat). M type...7mA 6mA 5mA 4mA 400 300 200 100 0 3mA 2mA 1mA 800 VCE=10V Ta=25C 700 IC -- I B Collector power...
Description Silicon NPN epitaxial planer type(For medium-power general amplification)

File Size 39.03K  /  2 Page

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    2SD874 2SD874A

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PANASONIC[Panasonic Semiconductor]
Part No. 2SD874 2SD874A
OCR Text ...nit: mm s Features q q q 0.4max. 45 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD874 2SD874A...7mA 6mA 0.75 5mA 4mA 0.50 3mA 2mA 0.25 1mA 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75C 25C...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)

File Size 38.73K  /  2 Page

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    2SD875

PANASONIC[Panasonic Semiconductor]
Part No. 2SD875
OCR Text ... 4.50.1 1.60.2 1.50.1 1.0-0.2 +0.1 Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini Power ty...7mA 6mA 5mA 0.6 4mA 3mA 0.4 2mA 0.2 1mA 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 30...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)

File Size 37.77K  /  2 Page

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    2SD882S UTC2SD882S

Unisonic Technologies
Part No. 2SD882S UTC2SD882S
OCR Text ...c IB Tj TSTG RATING 40 30 5 0.5 3 7 0.6 150 -55 ~ +150 UNIT V V V W A A A C C ELECTRICAL CHARACTERISTICS (Ta=25C,unless otherwise...7mA S/ b 8 0.8 lim ite d D pa si is -IB=4mA -IB=3mA -IB=2mA -IB=1mA 50 4 ...
Description NPN EPITAXIAL SILICON TRANSISTOR

File Size 73.22K  /  2 Page

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    2SD965

Panasonic, Corp.
Panasonic Semiconductor
Part No. 2SD965
OCR Text ... (Ta=25C) Ratings 40 20 7 8 5 0.75 150 -55 ~ +150 Unit V V V A A W C C 2.540.15 123 0.45 -0.1 1.27 +0.2 13.50.5 Low collector to e...7mA 6mA 1.6 5mA 1.2 4mA 3mA 0.8 2mA 0.4 2SD965 IC -- VCE 6 VCE=2V 5 25C IC -- VBE Collect...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification) 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

File Size 38.24K  /  2 Page

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    2SD966

PANASONIC[Panasonic Semiconductor]
Part No. 2SD966
OCR Text ...55 ~ +150 Unit V V V A A W C C 0.45-0.1 1.27 1.27 +0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base...7mA 6mA 1.6 5mA 1.2 4mA 3mA 0.8 2mA 0.4 2SD966 IC -- VCE 6 VCE=2V 5 25C IC -- VBE Collect...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)

File Size 34.98K  /  2 Page

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    2SD973A 2SD973 2SD0973

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD973A 2SD973 2SD0973
OCR Text 0.4 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q 1.5 1.00.1 Low collector to emitter saturation voltage VCE(sat). M t...7mA 6mA 5mA 4mA Collector current IC (A) IB=10mA 9mA 0.8 0.8 0.75 0.6 0.6 0....
Description Silicon NPN epitaxial planer type small signal transistor
Silicon NPN epitaxial planer type(For low-frequency power amplification) 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR

File Size 47.93K  /  3 Page

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    ELM339 ELM339P ELM339SM

ELM[ELM Electronics]
ETC
Part No. ELM339 ELM339P ELM339SM
OCR Text ...with respect to VSS............ 0 to +7.5V Voltage on any other pin with respect to VSS........................... -0.6V to (VDD + 0.6V) Not...7mA Current (source) = 5.4mA see note 4 see note 5 VDD - 0.7 250 0 260 275 msec msec Notes:...
Description    INFRARED REMOTE CONTROL
Interfrared remote control

File Size 26.20K  /  4 Page

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    K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text ... History Revision No. History 0.0 0.1 Initial issue. At Read2 operation in X16 device : A3 ~ A7 are Don' care ==> A3 ~ A7 are "L" t 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. AC parameter is ...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 601.33K  /  34 Page

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    PC8170NSZ PC81710NSZ PC81711NSZ PC81712NSZ PC81713NSZ PC81715NSZ PC81716NSZ PC81718NSZ PC8171NSZ PC8171XNSZ PC817XNSZ-SE

SHARP[Sharp Electrionic Components]
Sharp Electronics Corp.
Part No. PC8170NSZ PC81710NSZ PC81711NSZ PC81712NSZ PC81713NSZ PC81715NSZ PC81716NSZ PC81718NSZ PC8171NSZ PC8171XNSZ PC817XNSZ-SERIES
OCR Text 0.5mA) 2. High resistance to noise due to high common rejection voltage (CMR:MIN. 10kV/s) 3. Compact dual-in line package 4. Isolation volta...7mA 20 IF=5mA IF=3mA IF=2mA 10 IF=1mA 0 IF=0.5mA 1 Forward current IF (mA) 10 0 2 4 ...
Description PC8171NSZ PC8171NSZ
Low Input Current Type Photocoupler

File Size 62.42K  /  5 Page

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