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SU842970 TA31002A 71055 NQ40W40 SSR0508J HC15R8R 8HC05 BR201
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  0.8a -0.6a Datasheet PDF File

For 0.8a -0.6a Found Datasheets File :: 3578    Search Time::1.328ms    
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    ZXMN3A03E6 ZXMN3A03E6TA ZXMN3A03E6TC

ZETEX[Zetex Semiconductors]
Part No. ZXMN3A03E6 ZXMN3A03E6TA ZXMN3A03E6TC
OCR Text 0.050 ID= 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of...8A V GS =4.5V, I D =6.8A V DS =10V,I D =7.8A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Static Drain-...
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 924.08K  /  7 Page

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    IRF7301 IRF7301TR

IRF[International Rectifier]
Part No. IRF7301 IRF7301TR
OCR Text ... 3 6 4 5 RDS(on) = 0.050 T o p V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced ...8A, VGS = 0V --- 29 44 ns TJ = 25C, IF = 2.6A --- 22 33 nC di/dt = 100A/s Intrinsic turn-on time i...
Description FERRITE BEAD BLM21A601S
Power MOSFET(Vdss=20V Rds(on)=0.050ohm)
Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 109.86K  /  9 Page

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    IRF7304

International Rectifier
Part No. IRF7304
OCR Text ...wer dissipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 D1 D1 D2 D2 2 7 VDSS = -20V ...8A --- --- V VDS = VGS, ID = -250A --- --- S VDS = -16V, ID = -2.2A --- -1.0 VDS = -16V, VGS = 0V A ...
Description Generation V Technology

File Size 205.83K  /  6 Page

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    IRF7307 IRF7307TR

IRF[International Rectifier]
Part No. IRF7307 IRF7307TR
OCR Text ...S FE T T op V iew RDS(on) 0.050 0.090 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques ...8A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 15V, ID = 2.6A VDS = -15V, ID = -2.2A VDS = 1...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 190.19K  /  10 Page

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    IRF7309 IRF7309TR IRF7309PBF

International Rectifier
Part No. IRF7309 IRF7309TR IRF7309PBF
OCR Text ...wer dissipation of greater than 0.8W is possible in a typical PCB mount application. S1 G1 S2 G2 D1 D1 N-Ch VDSS 30V P-Ch -30V ...8A VGS = -4.5V, ID = -1.5A VDS = VGS, ID = 250A V VDS = VGS, ID = -250A VDS = 15V, ID = 2.4A S VDS =...
Description 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 161.00K  /  8 Page

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    IRF7311

IRF[International Rectifier]
Part No. IRF7311
OCR Text ... 3 6 4 5 RDS(on) = 0.029 T o p V ie w Description Fifth Generation HEXFETs from International Rectifier utilize advanced...8A 3.3A 4.1A 0.04 200 0.03 150 I D = 6.6A 100 0.02 50 0.01 0 2 4 6 8 A...
Description HEXFET Power MOSFET

File Size 154.76K  /  7 Page

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    IRF7316

IRF[International Rectifier]
Part No. IRF7316
OCR Text ... D2 D2 VDSS = -30V RDS(on) = 0.058 6 5 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques...8A. max. junction temperature. ( See fig. 11 ) ISD -2.8A, di/dt 150A/s, VDD V(BR)DSS, TJ ...
Description HEXFET POWER MOSFET

File Size 235.36K  /  7 Page

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    IRF7317

IRF[International Rectifier]
Part No. IRF7317
OCR Text ...oldering techniques. RDS(on) 0.029 0.058 T o p V ie w S O -8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol...8A 3.3A 4.1A 0.04 200 0.03 150 I D = 6.6A 100 0.02 50 0.01 0 2 4 6 8 A...
Description 6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
HEXFET Power MOSFET

File Size 147.74K  /  10 Page

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    IRF7319

IRF[International Rectifier]
Part No. IRF7319
OCR Text ...A N N E L M O S FE T RDS(on) 0.029 0.058 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin...8A VGS = 4.5V, ID = 4.7A VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = VGS, ID = 250A VDS...
Description HEXFET Power MOSFET
HEXFET?? Power MOSFET

File Size 128.05K  /  10 Page

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    IRF7416 IRFB7416 IRF7416TR

International Rectifier
Part No. IRF7416 IRFB7416 IRF7416TR
OCR Text ... 3 6 4 5 RDS(on) = 0.02 T op V ie w Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec...8A --- --- V VDS = VGS , ID = -250A --- --- S VDS = -10V, ID = -2.8A --- -1.0 VDS = -24V, VGS = 0V ...
Description Power MOSFET(Vdss=-30V/ Rds(on)=0.02ohm)
Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 112.47K  /  9 Page

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