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0.8ghz Datasheet PDF File

For 0.8ghz Found Datasheets File :: 978 Search Time::2.078ms
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				Hittite Microwave Corporation
Part No.	HMC713LP309
OCR Text	...uency Eval Board VSET to OUTP 1 0.2 - 1.2 64 11 M V dB kHz F= 50 MHz to 8 GHz Z0 = 50, See plot 10 dB 4.0 / 0.43 0.2 - 2.1 mA V CLPF= 0, No ...8GHz 3.9GHz 7GHz 8GHz 23 21 19 17 15 0 1 2 +25C +85C -40C 23 21 19 17 15 12 POWER DETEC...
Description	54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 50 - 8000 MHz
File Size	564.96K / 12 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC713LP3E
OCR Text	...uency Eval Board VSET to OUTP 1 0.2 - 1.2 64 11 M V dB kHz F= 50 MHz to 8 GHz Z0 = 50, See plot 10 dB 4.0 / 0.43 0.2 - 2.1 mA V CLPF= 0, No ...8GHz 3.9GHz 7GHz 8GHz 23 21 19 17 15 0 1 2 +25C +85C -40C 23 21 19 17 15 12 POWER DETEC...
Description	54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 50 - 8000 MHz
File Size	564.88K / 12 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193W Q62702-F1577
OCR Text	...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...8GHz VCE = Parameter 15 dB dB 13 10V 10V 3V 2V G 18 G 5V 3V 12 11 10 9 16 2V...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.05K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text	...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...8GHz VCE = Parameter 13 dB dB 11 10V 5V 3V 2V G 10V 16 5V 3V G 10 9 8 14 2...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.37K / 7 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EFE960BVR-5759
OCR Text	...* * 5.70-5.90 GHz Bandwidth +36.0 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dB...8GHz f = 5.8GHz TYP 36.0 9.0 25 1300 MAX UNITS dBm dB % Power Added Efficiency at 1dB ...
Description	5.70-5.90GHz 4-Watt Partially Matched Power FET
File Size	117.29K / 3 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1359 BFG19S BFG19
OCR Text	... A 10 40 220 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...8GHz VCE = Parameter 10 dB 10V G G 5V 3V 6 2V 8 1V 6 4 1V 2 4 0.7V...
Description	NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna) From old datasheet system NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)
File Size	49.50K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon Technologies AG
Part No.	Q62702-F1382 BFP183
OCR Text	...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...8GHz VCE = Parameter 16 dB 10V 5V dB 10V G 18 G 12 3V 2V 3V 2V 16 10 ...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管（对于低噪声，高增益2毫安0毫安的集电极电流宽带放大器） NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
File Size	60.49K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1492 BFR182W
OCR Text	...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...8GHz VCE = Parameter 14 dB 10V 3V dB 10V 3V 2V G G 10 16 2V 8 14 6 12 1...
Description	NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) From old datasheet system
File Size	55.96K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1494 BFR280W
OCR Text	...one) at collector currents from 0.2mA to 8mA * fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe ...8GHz VCE = Parameter 14 dB 2V 10V 3V 2V G 16 G 10 14 1V 12 0.7V 8 1V 6 ...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems From old datasheet system
File Size	56.22K / 7 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SBFP420M
OCR Text	...ns unit : mm 0000 [SBFP420M] 0.25 * * Low noise : NF=1.1dB typ (f=1.8GHz). High cut-off frequency : fT=18GHz typ (VCE=1V). : fT=25GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=17dB typ (f=1.8GHz). 0.3 4 3 0.15 ...
Description	UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications
File Size	44.73K / 2 Page	View it Online	Download Datasheet

For 0.8ghz Found Datasheets File :: 978 Search Time::2.078ms
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