1.5/1.9ghz BAND FRONT-END GaAs MMIC
nGENERAL DESCRIPTION NJG1705V is a front-end GaAs MMIC including a LNA, local amplifier and a Mixer, designed mainly for 1.5 and 1.9ghz band cellular phone. NJG1705V exhibits low noise of 16dB at 1.5GHz ...
1.5/1.9ghz BAND FRONT-END GaAs MMIC
nGENERAL DESCRIPTION NJG1709KC1 is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for 1.5 or 1.9ghz band cellular phone. The ultra small & ultra thin FLP10 package ...
...elecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA * Power amplifier for DECT and PCN systems * fT = 7.5GHz
F = 1.5 dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Typ...
Description
From old datasheet system NPN Silicon RF Transistor(For low noise low distortion broadband amplifiers in antenna and telecommunications) NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)
...elecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA * Power amplifier for DECT and PCN systems * fT = 7.5GHz
F = 1.5 dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Typ...
Description
From old datasheet system NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
...5 mA to 12mA * fT = 8GHz
F = 1.45dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...5 mA, VCE = 8 V
Semiconductor Group
2
Dec-11-1996
BFR 181W
Electrical Characteristics...
Description
NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) From old datasheet system
...5 mA to 12mA * fT = 8GHz
F = 1.45dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...5 mA, VCE = 8 V
Semiconductor Group
2
Dec-11-1996
BFR 181
Electrical Characteristics ...
Description
From old datasheet system NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
...0.2mA to 8mA * fT = 7GHz
F = 1.5dB at 900MHz
* Two (galvanic) internal isolated Transistors in one package
ESD: Electrostatic dischar...5 = E 3/6 = C
Package SOT-363
data below is of a single transistor
Maximum Ratings Paramete...
Description
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) From old datasheet system
...ifier of Micro Wave Application(1.5 to 1.9ghz) Low voltage and low current operation (2.7V, 1.7mA typ.) Low noise (1.4 dB typ. @1.5GHz) High power gain (14 dB typ. @1.5GHz) Built-in matching circuits (50) Small surface mount package (MPAK-5...
Description
GaAs MMIC Low Noise Amplifier for Micro Wave Application