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1000v-5.3-3a- Datasheet PDF File

For 1000v-5.3-3a- Found Datasheets File :: 480 Search Time::1.938ms
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				Philips
Part No.	BUJ403A
OCR Text	...e bias safe operating area Vcl 1000V; Vcc = 150V; VBB = -5V;LB = 1H; Lc = 200H December 1998 5 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A MECHANICAL DATA Dimens...
Description	Silicon Diffused Power Transistor
File Size	49.37K / 7 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SC5420
OCR Text	... * High breakdown voltage (VCBO=1000V). * High reliability (Adoption of HVP process). * Adoption of MBIT process. Package Dimensions unit: mm 2069B-SMP-FD [2SC5420] 10.2 4.5 1.3 8.8 1.2 0.8 1 2 3 2.7 0.4 3.0 Specifications Ab...
Description	Inverter Lighting Applications
File Size	40.42K / 4 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STU7NB100 6508
OCR Text	1000V - 1.2 - 7.3A - Max220 PowerMESHTM MOSFET PRELIMINARY DATA TYPE STU7NB100 s s s s s s s V DSS 1000 V R DS(on) < 1.5 ID 7.3 A TYPICAL RDS(on) = 1.2 EXTREMELY HIGH dv/dt CAPABILITY 30V GATE TO SOURCE VOLTAGE RATING 10...
Description	N - CHANNEL 1000V - 1.2 - 7.3A - Max220 PowerMESH TM MOSFET From old datasheet system N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET
File Size	44.78K / 5 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	2SC5270 2SC5270A 5270
OCR Text	...C=25C) Symbol Conditions VCB = 1000V, IE = 0 ICBO VCB = 1500V, IE = 0 VCB = 1600V, IE = 0 IEBO hFE VCE(sat) VBE(sat) fT tstg tf VEB = 5V, I...5 0.12 2.5 0.2 5 min typ max 50 50 1 1 50 12 3 1.5 V V MHz s s Unit A mA A 1 Power Transist...
Description	RED LION LD200600 LARGE DISPLAY COUNTER REFURBISHED BY NEWARK SERVICES Silicon NPN triple diffusion mesa type(For horizontal deflection output)
File Size	33.06K / 2 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	IKA06N60T Q67040S4678
OCR Text	...100kH z 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operati...
Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	351.04K / 14 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	2SD2057
OCR Text	... fT tstg tf VF Conditions VCB = 1000V, IE = 0 VCB = 1500V, IE = 0 IE = 500mA, IC = 0 VCE = 10V, IC = 5A IC = 5A, IB = 1.2A IC = 5A, IB = 1.2...5 15 8 1.5 V V MHz s s V min typ max 30 300 Unit A A V 1 Power Transistors PC -- Ta 120 10 (...
Description	Silicon NPN triple diffusion planar type For horizontal deflection output
File Size	44.46K / 2 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	IRFPG40
OCR Text	1000V, 3.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MO...5 ID = 3.9A, VDS = 800V, VGS = 10V (Figure 13) Free Air Operation MAX 4.0 25 250 100 3.5 30 50 170 5...
Description	4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET
File Size	47.74K / 6 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKB04N60 SKP04N60
OCR Text	... 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 67) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operati...
Description	IGBTs & DuoPacks - 4A 600V TO220AB IGBT Diode IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT Diode Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	390.12K / 13 Page	View it Online	Download Datasheet

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