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  100200 Datasheet PDF File

For 100200 Found Datasheets File :: 71    Search Time::1.266ms    
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    FDMS7658AS

Fairchild Semiconductor
Part No. FDMS7658AS
OCR Text ... 0.01 0.01 0.1 1 10 100200 0.5 -3 10 10 -2 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maxi...
Description N-Channel PowerTrench? SyncFETTM 30 V, 49 A, 1.9 mΩ
N-Channel PowerTrench垄莽 SyncFETTM 30 V, 49 A, 1.9 m楼?

File Size 419.05K  /  8 Page

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    FDMC8200

Fairchild Semiconductor
Part No. FDMC8200
OCR Text ...0.001 0.01 0.1 1 10 100200 50 75 100 o 125 150 VDS, DRAIN to SOURCE VOLTAGE (V) Tc, CASE TEMPERATURE ( C) Figure 9. Forward Bias Safe Operating Area Figure 10. Maximum Continuous Drain Current vs Case...
Description Dual N-Channel PowerTrench? MOSFET 30 V, 9.5 mΩ and 20 mΩ
Dual N-Channel PowerTrench垄莽 MOSFET 30 V, 9.5 m楼? and 20 m楼?
Dual N-Channel PowerTrench?MOSFET

File Size 461.44K  /  11 Page

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    FDMS0312S

Fairchild Semiconductor
Part No. FDMS0312S
OCR Text ... 0.01 0.01 0.1 1 10 100200 1 TA = 25 oC 0.5 -4 -3 -2 10 10 10 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Sing...
Description N-Channel PowerTrench垄莽 SyncFETTM
N-Channel PowerTrench? SyncFETTM

File Size 267.55K  /  8 Page

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    FDMS7672AS

Fairchild Semiconductor
Part No. FDMS7672AS
OCR Text ... 0.01 0.01 0.1 1 10 100200 1 TA = 25 oC 0.5 -4 -3 -2 10 10 10 10 -1 1 10 100 1000 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Sing...
Description N-Channel PowerTrench? SyncFET 30 V, 42 A, 4 mΩ
N-Channel PowerTrench垄莽 SyncFET 30 V, 42 A, 4 m楼?

File Size 430.98K  /  8 Page

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    2SB1386 2SB1386L-X-AB3-F-R 2SB1386L-P-AB3-B-R 2SB1386L-P-AB3-C-R 2SB1386L-P-AB3-E-R 2SB1386L-Q-AB3-B-R 2SB1386L-Q-AB3-C-

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友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 2SB1386 2SB1386L-X-AB3-F-R 2SB1386L-P-AB3-B-R 2SB1386L-P-AB3-C-R 2SB1386L-P-AB3-E-R 2SB1386L-Q-AB3-B-R 2SB1386L-Q-AB3-C-R 2SB1386L-Q-AB3-E-R 2SB1386L-R-AB3-B-R 2SB1386L-R-AB3-C-R 2SB1386L-R-AB3-E-R 2SB1386-P-AB3-B-R 2SB1386-P-AB3-C-R 2SB1386-P-AB3-E-R 2SB1386-Q-AB3-B-R 2SB1386-Q-AB3-C-R 2SB1386-Q-AB3-E-R 2SB1386-R-AB3-B-R 2SB1386-R-AB3-C-R 2SB1386-R-AB3-E-R 2SB1386-X-AB3-F-R
OCR Text ... =1MHz IE=0A 2 5 10 20 50 100200 500 1000 Emitter Current, IE(mA) 10 -5 -10 -20 -0.1 -0.2 -0.5 -1 -2 Collector to Base Voltage, VCB(V) -50 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R208-019,B 2SB138...
Description LOW FREQUENCY PNP TRANSISTOR

File Size 198.33K  /  5 Page

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    2SB1412L-TN3-B-R 2SB1412L-TN3-C-R 2SB1412L-TN3-E-R 2SB1412L-TN3-F-R 2SB1412 2SB1412-TN3-F-R 2SB1412-TN3-B-R 2SB1412-TN3-

Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 2SB1412L-TN3-B-R 2SB1412L-TN3-C-R 2SB1412L-TN3-E-R 2SB1412L-TN3-F-R 2SB1412 2SB1412-TN3-F-R 2SB1412-TN3-B-R 2SB1412-TN3-C-R 2SB1412-TN3-E-R
OCR Text ...5 f =1MHz IE=0A 2 5 50 100200 500 1000 Emitter Current : IE(mA) 10 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 Collector to Base Voltage:VCB (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 Q...
Description HIGH VOLTAGE SWITCHING TRANSISTOR 高压开关晶体管

File Size 96.90K  /  5 Page

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    FDMC7660

FAIRCHILD SEMICONDUCTOR CORP
Part No. FDMC7660
OCR Text ... operating area 0.01 0.1 1 10 100200 0.01 0.1 1 10 100 300 dc 100 ms 10 ms 1 ms 1s i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds ( on ) single pulse t j = max rated r ja = 125 o c/w t a = 25 ...
Description N-Channel PowerTrench? MOSFET 30 V, 20 A, 2.2 mΩ
30V N-Channel PowerTrench&#174; MOSFET; 8-Power-33; Tape and Reel

File Size 247.52K  /  7 Page

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    Sammwin
Part No. SW50N06
OCR Text ...delay time -4060 t r rise time -100200 t d(off) turn-off delay time -90180 t f fall time -80160 q g total gate charge -3040 q gs gate-source charge -9.6- q gd gate-drain charge (miller charge) -10- nc v ds =48v,v gs =10v, i d =50a (note4,5...
Description N-Channel MOSFET

File Size 374.01K  /  6 Page

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