|
|
|
Samsung Electronic
|
Part No. |
M464S0924BT1 M464S1724BT1sdramsodimm
|
Description |
8M x 64 sdram sodimm based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect 16mx64 sdram sodimm based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
File Size |
201.18K /
26 Page |
View
it Online |
Download Datasheet |
|
|
|
Samsung Semiconductor Co., Ltd.
|
Part No. |
M366S1623ET0
|
Description |
16mx64 sdram DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 16mx64 sdram的内存在8Mx8BanksK的刷新,3.3社民党基于同步DRAM
|
File Size |
116.25K /
12 Page |
View
it Online |
Download Datasheet |
|
|
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
Part No. |
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
|
Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的sodimm基于512Mb乙芯4位非ECC 200pin Unbuffered sodimm based on 512Mb B-die 64bit Non-ECC 200pin缓冲的sodimm基于512Mb乙芯64位非ECC 64M X 64 ddr DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, sodimm-200 32M X 64 ddr DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, sodimm-200 200pin Unbuffered sodimm based on 512Mb B-die 64bit Non-ECC 200pin缓冲的sodimm基于512Mb乙芯4位非ECC 128M X 64 ddr DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, sodimm-200 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
File Size |
325.20K /
19 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|