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  22.6cm Datasheet PDF File

For 22.6cm Found Datasheets File :: 311    Search Time::1.188ms    
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    BAT64-04W BAT64-05W BAT64-06W BAT64W BAT64-W Q62702-A1160 Q62702-A1161 BAT6404W Q62702-A1162 Q62702-A1159

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAT64-04W BAT64-05W BAT64-06W BAT64W BAT64-W Q62702-A1160 Q62702-A1161 BAT6404W Q62702-A1162 Q62702-A1159
OCR Text ...or Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAT 64...W Forward current IF = f (V F) Reverse current IR = f (VR) T A = Parameter BAT 64... EHB00057 TA = Parameter BAT 64... EHB00058 F 10 mA 2 R ...
Description Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications Integrated diffused guard ring)
From old datasheet system

File Size 68.69K  /  6 Page

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    BAT64-07W BAT6407W Q62702-A3470 BAT6407WQ62702A3470

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BAT64-07W BAT6407W Q62702-A3470 BAT6407WQ62702A3470
OCR Text ...or Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAT 64-07W Forward current IF = f (TA*;TS) * Package mounted on epoxy 300 mA TS 200 IF TA 150 100 50 0 0 20 40 60 80 100 120 C ...
Description Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) 0.12 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Ten Output Zero Delay Buffer
INVERTER 5V-INPUT 900V-OUTPUT
From old datasheet system

File Size 32.83K  /  3 Page

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    IPB10N03L IPP10N03L

Infineon Technologies AG
Part No. IPB10N03L IPP10N03L
OCR Text ...10.6 19 18.2 3.6 5 13.3 23.8 22.8 - nC V DD=15V, ID=36A, V GS=0 to 5V V DS=15V, ID=36A, V GS=0V nC V V(plateau) V DD=15V, ID=36A IS TC=25C - 0.96 32.9 33 73 292 A 1.28 V 41.2 ns 41 nC Page 3 2003-01...
Description OptiMOS Buck converter series
OptiMOS Buck converter series
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 9.2mOhm, 73A, LL
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 9.2mOhm, 73A, LL

File Size 451.91K  /  8 Page

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    IPB15N03L IPP15N03L 15N03L

INFINEON[Infineon Technologies AG]
Part No. IPB15N03L IPP15N03L 15N03L
OCR Text ... m 30 V 24 RDS(on) 22 20 18 16 14 12 10 8 6 4 2 0 -60 -20 20 60 100 140 C V GS(th) 0.8mA 1.5 40uA 98% 1 typ 0.5 200 0 -60 -20 20 60 100 C Tj 180 Tj 11 Typ. capacitances C = f (V...
Description IPP15N03L
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.9mOhm, 42A, LL
OptiMOS Buck converter series
OptiMOS Buck converter series

File Size 448.37K  /  8 Page

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    IPD12N03L IPU12N03L

INFINEON[Infineon Technologies AG]
http://
Part No. IPD12N03L IPU12N03L
OCR Text ... - 3 10.3 18.2 3.8 12.9 22.8 nC VDD=15V, ID=15A, VGS=0 to 5V - Output charge Q oss VDS=15V, ID =15A, VGS=0V - 16.5 20.6 nC Gate plateau voltage Reverse Diode Inverse diode continuous forward current ...
Description DDM43W2S
OptiMOS Power MOSFET, 30V, TO251, RDSon = 10.4mOhm, 30A, LL
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL
OptiMOS Buck converter series

File Size 151.83K  /  8 Page

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    SGW10N60 SGW10N60A SGB10N60A SGP10N60A

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SGW10N60 SGW10N60A SGB10N60A SGP10N60A
OCR Text ..., I C =1 0 A V G E = 15 V T O - 22 0A B T O - 24 7A C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for collector connection. PCB is vertic...
Description Fast IGBT in NPT-technology
IGBTs & DuoPacks - 10A 600V TO220AB IGBT
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 10A 600V TO247AC IGBT

File Size 397.18K  /  12 Page

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    BSS84P

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BSS84P
OCR Text ... b c d e f g 22 20 -0.32 f b c -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0 -0.28 R DS(on) e d e 18 16 14 12 10 8 6 4V GS [V] = h i j k l ID -0.24 -0.2 -0.16 -0.12 -0.08 -0.04 0 ...
Description    SIPMOS Small-Signal-Transistor

File Size 86.59K  /  8 Page

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    ICE2A165 ICE2A365 ICE2A265 ICE2A280 ICE2A180

INFINEON[Infineon Technologies AG]
Part No. ICE2A165 ICE2A365 ICE2A265 ICE2A280 ICE2A180
OCR Text ... . . . . . . . . . . . . . . . .22 Datasheet 4 September 2001 CoolSETTM-F2 ICE2A165/265/365 ICE2A180/280 Pin Configuration and Functionality 1 1.1 Pin Configuration and Functionality Pin Configuration 1.2 Pin Functional...
Description Off-Line SMPS Current Mode Controller with integrated 650V/800V CoolMOS⑩
IC,SMPS CONTROLLER,CURRENT-MODE,DIP,8PIN,PLASTIC

File Size 1,494.65K  /  23 Page

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    SPB04N60S5 SPP04N60S5

INFINEON[Infineon Technologies AG]
Part No. SPB04N60S5 SPP04N60S5
OCR Text ...220 7 20 35 55 30 60 15 max. 90 22.5 Unit g fs Ciss Coss Crss V DS2*I D*RDS(on)max, ID=2.8A - S pF V GS=0V, V DS=25V, f=1...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 3So...
Description for lowest Conduction Losses
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 320.11K  /  11 Page

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    SPD04N60S5 SPDU04N60S5 SPPB04N60S5 SPU04N60S5

http://
INFINEON[Infineon Technologies AG]
Part No. SPD04N60S5 SPDU04N60S5 SPPB04N60S5 SPU04N60S5
OCR Text ...220 7 20 35 55 30 60 15 max. 90 22.5 Unit g fs Ciss Coss Crss V DS2*I D*RDS(on)max, ID=2.8A - S pF V GS=0V, V DS=25V, f=1...6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 3C ...
Description Cool MOS?/a> Power Transistor
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
for lowest Conduction Losses

File Size 264.52K  /  11 Page

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For 22.6cm Found Datasheets File :: 311    Search Time::1.188ms    
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