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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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Part No. |
K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7P403622B-HC20 K7P403622B K7P403622B-HC16 K7P403622B-HC25 K7P401822B-HC160 K7P403622B-HC200 K7P401822B-HC20T
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Description |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36 128Kx36 & 256kx18 Synchronous Pipelined sram 128K × 36 256K X 18 STANDARD sram, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 128K X 36 STANDARD sram, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 256K X 18 STANDARD sram, 3 ns, PBGA119 14 X 22 MM, BGA-119 SENSOR DIFF VACUUM GAGE 1PSI SENSOR ABSOLUTE 0-15PSIA 128Kx36 & 256kx18 Synchronous Pipelined sram
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File Size |
278.02K /
13 Page |
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it Online |
Download Datasheet |
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Micron Technology, Inc.
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Part No. |
MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128L36P1 MT55L128V32P1
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Description |
3.3V I/O28K x 32,flow-through ZBT sram(3.3V输入/输出,4Mb流通式同步静态存储器) 2.5V I/O56K x 18,flow-through ZBT sram(2.5V输入/输出,4Mb流通式同步静态存储器) 3.3V I/O56K x 18,flow-through ZBT sram(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT sram的电压(3.3V输入/输出Mb的流通式同步静态存储器 3.3V I/O28K x 36,flow-through ZBT sram(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36,流量通过ZBT sram的电压(3.3V或输输出Mb的流通式同步静态存储器 2.5V I/O28K x 32,flow-through ZBT sram(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32,流量通过ZBT sram的电压(2.5V输入/输出Mb的流通式同步静态存储器
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File Size |
426.03K /
25 Page |
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it Online |
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Micron Technology, Inc.
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Part No. |
MT58L64L18F MT58L32L32F MT58L32L36F
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Description |
32K x 323.3V I/O, flow-through SyncBurst sram(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 32K x 363.3V I/O, flow-through SyncBurst sram(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K x 18, 3.3V I/O, flow-through SyncBurst sram(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的sram兆,3.3V的输输出,流通式同步脉冲静态内存)
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File Size |
323.17K /
17 Page |
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it Online |
Download Datasheet |
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Price and Availability
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