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For 3.6gb s Found Datasheets File :: 76 Search Time::3.625ms
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					Sunon, Inc. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4R441869A K4R271669A-NMCG6 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NBMCCG6
OCR Text	...00 tRAC (Row Access Time) ns 53.3 45 45 53.3 45 45 Part Number Features Highest sustained bandwidth per DRAM device K4R271669A-Nb...6GB/s sustained data transfer rate - separate control and data buses for maximized efficiency - sepa...
Description	256K x 16/18 bit x 216 Dependent Banks Direct RDRAMTM 256 × 16/18位2 16属银行直接RDRAMTM
File Size	4,066.36K / 64 Page	View it Online	Download Datasheet

					Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	KM416RD8ACD-RK70 KM416RD8ACD-RK80 KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD2D KM416RD2C KM418RD4C KM416RD8D KM418RD4D KM416RD4D KM418RD2C KM416RD2D KM416RD8C KM418RD8C KM418RD8D KM418RD2AC KM418RD8ACD-RG60 KM416RD8ACDB-RCG60
OCR Text	...C(D) ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 Direct RDRAMTM KM 4 XX XX XX X X - X X XX sAMsUNG Memory Device Organization Produ...6GB/s sustained data transfer rate - separate control and data buses for maximized efficiency - sepa...
Description	128/144Mbit RDRAM 256K x 16/18 bit x 216 Dependent Banks Direct RDRAMTM 128/144Mbit RDRAM56 × 16/18位2 16属银行直接RDRAMTM 24.9K 1% 1/4W -200 TO 500 PPM/C MF 128/144Mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM BACKsHELL CLAMP
File Size	4,061.75K / 64 Page	View it Online	Download Datasheet

					Samsung Electronic
Part No.	K4J55323QF-GC15 K4J55323QF-GC14 K4J55323QF-GC16 K4J55323QF-GC20
OCR Text	... banks graphic double data rate 3 samsung electronics reserves the right to change products or specification without notice. (144 - ball f...6gb/ s/chip. i/o transactions are possible on both edges of the clock cycle. range of operating fre...
Description	256Mbit GDDR3 sDRAM
File Size	1,025.74K / 49 Page	View it Online	Download Datasheet

					SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4R271669E
OCR Text	...buffer to reduce read latency - 3 precharge mechanisms for controller flexibility - interleaved transactions ? advanced power management: ...6gb/s. control registers: the cmd, sck, sio0 and sio1 pins appear in the upper center of figure 2...
Description	128Mbit RDRAM(E-die)
File Size	292.00K / 20 Page	View it Online	Download Datasheet

					SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4R271669F
OCR Text	...buffer to reduce read latency - 3 precharge mechanisms for controller flexibility - interleaved transactions ? advanced power management: ...6gb/s. control registers: the cmd, sck, sio0 and sio1 pins appear in the upper center of figure 2...
Description	128Mbit RDRAM(F-die)
File Size	293.32K / 20 Page	View it Online	Download Datasheet

					SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4R881869 K4R881869M-NCK8 K4R881869M-NBCCG6
OCR Text	...buffer to reduce read latency - 3 precharge mechanisms for controller flexibility - interleaved transactions advanced power management: - ...6gb/s. control registers: the cmd, sck, sio0, and sio1 pins appear in the upper center of figure2...
Description	288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
File Size	4,098.44K / 64 Page	View it Online	Download Datasheet

					Samsung Electronic
Part No.	K4R441869A-NM K4R441869A-MCK8 K4R441869A-NCK7
OCR Text	...buffer to reduce read latency - 3 precharge mechanisms for controller flexibility - interleaved transactions advanced power management: ...6gb/s. control registers: the cmd, sck, sio0, and sio1 pins appear in the upper center of figure2...
Description	8M X 18 DIRECT RAMBUs DRAM, 45 ns, PBGA62 K4R271669A-N(M):Direct RDRAMData sheet
File Size	312.25K / 20 Page	View it Online	Download Datasheet

					SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4R271669B-NCK7 K4R271669B-MCK7 K4R271669B-MCK8 K4R271669B-NCK8 K4R271669B-NCG6 K4R271669B-MCG6 K4R441869B-MCK8 K4R441869B-MCK7 K4R441869B-MCG6 K4R441869B-NCG6
OCR Text	...buffer to reduce read latency - 3 precharge mechanisms for controller flexibility - interleaved transactions advanced power management: ...6gb/s. control registers: the cmd, sck, sio0, and sio1 pins appear in the upper center of figure2...
Description	256K x 16/18 bit x 32s banks Direct RDRAMTM 256 × 16/18位32秒银行直接RDRAMTM
File Size	314.70K / 20 Page	View it Online	Download Datasheet

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