45ns vsop ind tempflash pdf Datasheet P4 Description --- IC-ON-LINE


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45ns vsop ind tempflash Datasheet PDF File

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					Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
Description	8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
File Size	415.01K / 21 Page	View it Online	Download Datasheet

					Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] Maixm MAXIM - Dallas Semiconductor
Part No.	MXD1013 MXD1013PA MXD1013PD MXD1013SA MXD1013SE MXD1013UA MXD1013UA___ MXD1013C_D___ MXD1013PA___ MXD1013PD___ MXD1013SA___ MXD1013SE___ MXD1013C-D MXD1013C_D MXD1013D MXD1013C/D MXD1013SE070 MXD1013SE075 MXD1013SE025 MXD1013SE050 MXD1013SE012 MXD1013SE020 MXD1013SE090 MXD1013SE080 MXD1013SE030 MXD1013SE015 MXD1013SE045
Description	3-in-1 silicon delay line. Output delay 45ns. 3-in-1 silicon delay line. Output delay 30ns. 3-in-1 silicon delay line. Output delay 90ns. 3-in-1 silicon delay line. Output delay 12ns. 3-in-1 silicon delay line. Output delay 25ns. Silver Mica Capacitor; Capacitance:11pF; Capacitance Tolerance: 1pF; Series:CD4; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:2.5mm; Leaded Process Compatible:No RoHS Compliant: No 3-in-1 silicon delay line. Output delay 70ns. 3-in-1 silicon delay line. Output delay 75ns. 3-in-1 silicon delay line. Output delay 50ns. 3-in-1 silicon delay line. Output delay 20ns. 3-in-1 silicon delay line. Output delay 80ns. 3-in-1 silicon delay line. Output delay 15ns.
File Size	56.97K / 6 Page	View it Online	Download Datasheet

					AEROFLEX[Aeroflex Circuit Technology]
Part No.	UT7C139C45GCX UT7C138C45GCA UT7C138C45WCC UT7C138C55WCA UT7C138C55WPA UT7C138 UT7C139C45GCA UT7C139C45GCC UT7C139C55WPX UT7C138C45GCC UT7C138C45GCX UT7C138C45GPA UT7C138C45GPC UT7C138C45GPX UT7C138C45WCA UT7C138C45WCX UT7C138C45WPA UT7C138C45WPC UT7C138C45WPX UT7C138C55GCA UT7C138C55GCC UT7C138C55GCX UT7C138C55GPA UT7C138C55GPC UT7C138C55GPX UT7C138C55WCC UT7C138C55WCX UT7C138C55WPC UT7C138C55WPX UT7C139 UT7C139C45GPA UT7C139C45GPC UT7C139C45GPX UT7C139C45WCA UT7C139C45WCC UT7C139C45WCX UT7C139C45WPA UT7C139C45WPC UT7C139C45WPX UT7C139C55GCA UT7C139C55GCC UT7C139C55GCX UT7C139C55GPA UT7C139C55GPC UT7C139C55GPX UT7C139C55WCA UT7C139C55WCC UT7C139C55WCX UT7C139C55WPA UT7C139C55WPC 5962G9684501QXA 5962G9684501QXC 5962G9684501QXX 5962G9684501QYA 5962G9684501QYC 5962G9684501QYX 5962G9684501VXA 5962G9684501VXC 5962G9684501VXX 5962G9684501VYA 5962G9684501VYC 5962G9684501VYX 5962G9684502QXA 5962G9684502QXC 5962G9684502QXX 5962G9684502QYA 5962G9684502QYC 5962G9684502QYX 5962G9684502VXA 5962G9684502VXC 5962G9684502VXX 5962G9684502VYA 5962G9684502VYC 5962G9684502VYX 5962G9684503QXA 5962G9684503QXC 5962G9684503QXX 5962G9684503QYA 5962G9684503QYX 5962G9684503QYC 5962F9684501QXA 5962F9684501QXX
Description	Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). 4Kx9 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow. 4Kx9 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow. 4Kx8 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. 4Kx8 dual-port SRAM. Lead finish solder. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options. 4Kx8 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. 4Kx8 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow. 4Kx8 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow. 4Kx9 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. 4Kx9 dual-port SRAM. Lead finish optional. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). 4Kx9 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish gold. Class Q. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
File Size	355.81K / 21 Page	View it Online	Download Datasheet

					Hynix Semiconductor
Part No.	HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 HY51VS65163HGJ-6 HY51VS65163HGLJ-45 HY51VS65163HGLJ-6 HY51VS65163HGLJ-5 HY51VS65163HGLT-45 HY51VS65163HGLT-5 HY51VS65163HGT-45 HY51VS65163HGLT-6 HY51VS65163HGT-5 HY51VS65163HGT-6
Description	4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
File Size	97.47K / 11 Page	View it Online	Download Datasheet

					AMIC Technology
Part No.	A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S-60L A42L0616V-45L A42L0616V-50L A42L0616V-60 A42L0616V-60L
Description	45ns 1M x 16bit CMOS dynamic ram with EDO page mode 50ns 1M x 16bit CMOS dynamic ram with EDO page mode 60ns 1M x 16bit CMOS dynamic ram with EDO page mode
File Size	227.88K / 25 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B-JC-60 K4F640811B-JC-45 K4F640811B-JC-50 K4F640811B-JC-60 K4F660811B-JC-45
Description	8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
File Size	366.42K / 20 Page	View it Online	Download Datasheet

					AMIC Technology
Part No.	A42L2604S-45L A42L2604S-50L A42L2604V-45L A42L2604V-50L A42L2604V-45LU A42L2604V-50LU A42L2604SERIES
Description	45ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode 50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
File Size	259.37K / 25 Page	View it Online	Download Datasheet

					Panasonic Semiconductor Panasonic Corporation
Part No.	UN222X UNR2222 UNR2223 UNR2224 UNR2221
Description	Silicon NPN epitaxial planar type Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting POT THUMBWHEEL 10K OHM LINEAR
File Size	141.04K / 6 Page	View it Online	Download Datasheet

					G-LINK Technology
Part No.	GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216-40J4 GLT41216-40TC GLT41216-45J4 GLT41216-45TC
Description	30ns; 64K x 16 CMOS dynamic RAM with extended data output 35ns; 64K x 16 CMOS dynamic RAM with extended data output 40ns; 64K x 16 CMOS dynamic RAM with extended data output 45ns; 64K x 16 CMOS dynamic RAM with extended data output
File Size	565.15K / 18 Page	View it Online	Download Datasheet

					Samsung Electronic
Part No.	KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 KM416C1004CJ-L6 KM416C1204CJ-6 KM416C1204CJ-L6
Description	5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
File Size	1,552.00K / 35 Page	View it Online	Download Datasheet

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