5.25.8ghz pdf Datasheet P4 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 229EL P6N60 H7P0601 TCM809S 2SA701 06L80P 231GA 300SB
	Product Description
	Full Text Search

5.25.8ghz Datasheet PDF File

For 5.25.8ghz Found Datasheets File :: 858 Search Time::7.641ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1492 BFR182W
OCR Text	...apacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 1...25 0.19281 0.75 1.11 300 fA fA V fF V eV K 0.039478 A 0.071955 mA All parameters are re...
Description	NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) From old datasheet system
File Size	55.96K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1494 BFR280W
OCR Text	...urrent gain IC = 3 mA, VCE = 5 V Semiconductor Group 2 Dec-11-1996 BFR 280W Electrical Characteristics at TA = 25C, unless...25.609 1.6163 5.6909 1.0651 14.999 36.218 11.744 6.2179 1.1943 2.3693 0 3 V V fF ps mA V ns BF = IK...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems From old datasheet system
File Size	56.22K / 7 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SBFP420M
OCR Text	...Tj Tstg Conditions Ratings 15 4.5 1.5 35 160 150 --55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta=25C Parameter Collec...25 0.15 15 17 1.1 0.3 Conditions Ratings min typ max 200 35 150 GHz GHz pF dB dB dB Unit nA A Any...
Description	UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications
File Size	44.73K / 2 Page	View it Online	Download Datasheet

				http:// SIEMENS[Siemens Semiconductor Group]
Part No.	BFR280 Q62702-F1298
OCR Text	...urrent gain IC = 3 mA, VCE = 5 V Semiconductor Group 2 Dec-11-1996 BFR 280 Electrical Characteristics at TA = 25C, unless ...25.609 1.6163 5.6909 1.0651 14.999 36.218 11.744 6.2179 1.1943 2.3693 0 3 V V fF ps mA V ns BF = IK...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
File Size	57.01K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF1801 MGF1801B 1801B
OCR Text	... *1 Ratings -8 -8 250 -0.6 1.5 1.2 175 -65 to +175 Unit V V mA mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol V(BR)GDO V(B...25 20 PO 15 10 15 10 Gain:10dB 8 6 42 30 ID=100mA 25 20 PO vs. Pin (f=12GHz) Gain:10dB 8 6 42 ...
Description	TAPE CARRIER MICROWAVE POWER GaAs FET From old datasheet system
File Size	22.22K / 3 Page	View it Online	Download Datasheet

				Nais(Matsushita Electri... Panasonic, Corp. OSRAM GmbH NAIS[Nais(Matsushita Electric Works)] Matsushita Electric Works(Nais)
Part No.	ARJ2003 ARJ2003X ARJ2003Z ARJ22A4HZ ARJ2012 ARJ2012X ARJ2012Z ARJ2024 ARJ2024X ARJ2024Z ARJ204H ARJ204HX ARJ204HZ ARJ20A03 ARJ20A03X ARJ20A03Z ARJ20A12 ARJ20A12X ARJ20A12Z ARJ20A24 ARJ20A24X ARJ20A24Z ARJ20A4H ARJ20A4HX ARJ20A4HZ ARJ2203 ARJ2203X ARJ2203Z ARJ2212 ARJ2212X ARJ2212Z ARJ2224 ARJ2224X ARJ2224Z ARJ224H ARJ224HX ARJ224HZ ARJ22A03 ARJ22A03X ARJ22A03Z ARJ22A12 ARJ22A12X ARJ22A12Z ARJ22A24 ARJ22A24X ARJ22A24Z ARJ22A4H ARJ22A4HX
OCR Text	...m C Gold alloy Max. 150m 1W (at 5 GHz, Impedance 50 , V.S.W.R. &1.25) 10mA 10V DC (resistive load) 1W (at 5 GHz, Impedance 50 , V.S.W.R. &1.25) 30 V DC 0.3 A DC Max. 1.25 Max. 0.5dB Min. 35dB Min. 30dB Characteristics Initial insulation...
Description	SMD RELAYS WITH 8GHz CAPABILITIES SMD RELAYS WITH 8GHz CAPABILITIES 贴片继电器与8GHz的能
File Size	174.20K / 5 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	CXG1092 CXG1092N
OCR Text	...rol * 34.5dBm power handling at 5.0V (GSM900) * Low second harmonic < -36dBm at 34.5dBm * Small package size: 20-pin SSOP (6.4 x 5.0 x 1.25m...25 0 to 10 DETAIL A (0.5) DETAIL B : SOLDER DETAIL B : PALLADIUM NOTE: Dimension "" d...
Description	SP5T GSM Triple-Band Antenna Switch SP5T GSM Triple-Band Antenna Switch
File Size	66.50K / 6 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF1601B 1601B
OCR Text	... *1 Ratings -8 -8 250 -0.6 1.5 1.2 175 -65 to +175 Unit V V mA mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol V(BR)GDO V(B...25 20 PO 15 10 15 10 Gain:10dB 8 6 42 30 ID=100mA 25 20 PO vs. Pin (f=12GHz) Gain:10dB 8 6 42 ...
Description	From old datasheet system MICROWAVE POWER GaAs FET
File Size	25.18K / 3 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio]
Part No.	NJG1105F
OCR Text	... 1 6 Pin connection 2 5 3 4 1.VDD 2.GND 3.RF OUT 4.RF IN 5.GND 6.EXTCAP -1- NJG1105F nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Input Power Power Dissipation Operating Temp. Storage Temp. SYMBOL VDD Pin PD T...
Description	1.9/2.1GHz LOW NOISE AMPLIFIER GaAs MMIC
File Size	50.88K / 5 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio]
Part No.	NJG1107KB2 NJG1107KB2-C1 NJG1107KB2-C2 NJG1107KB2-C3 NJG1107KB2-L1 NJG1107KB2-L2 NJG1107KB2-L3 NJG1107KB2-L4 NJG1107KB2-R1
OCR Text	5/1.9GHz LNA GaAs MMIC nGENERAL DESCRIPTION NJG1107KB2 is a Low Noise Amplifier GaAs MMIC designed for 1.5GHz and 1.9GHz band digital cellu...25 20 DD =2.7V,I =3mA) DD 50 40 30 20 10 S21 2.2 16 S21,S11,S22 (dB) 15 10 5 0 -...
Description	1.5/1.9GHz LNA GaAs MMIC
File Size	424.56K / 19 Page	View it Online	Download Datasheet

For 5.25.8ghz Found Datasheets File :: 858 Search Time::7.641ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |