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TOSHIBA
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| Part No. |
TPCP8205-H
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| OCR Text |
...gate 1 3: source 2 4: gate 2 5, 6: drain 2 7, 8: drain 1 ps-8
2012-12-13 rev.4.0 tpcp8205-h 2 4. 4. 4. 4. absolute maximum ratings (...25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise... |
| Description |
Power MOSFET (N-ch dual)
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| File Size |
234.41K /
9 Page |
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it Online |
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Vishay Semiconductors
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| Part No. |
BRT12-H-X017 BRT12-M-X001 BRT12-H-X007 VISHAYSEMICONDUCTORS-BRT12-H-X019 BRT13-H
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| OCR Text |
6 5 4 mt2 mt1 nc a c nc optocoupler, phototriac output features ?i trms = 300 ma high static dv crq /dt < 10,000 v/ s electrically ...25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e perma... |
| Description |
Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT OPTOCOUPLER, ROHS COMPLIANT, SMD, 6 PIN
Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT OPTOCOUPLER, ROHS COMPLIANT, DIP-6
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| File Size |
383.02K /
8 Page |
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it Online |
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TOSHIBA
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| Part No. |
TPC8047-H
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| OCR Text |
...p.) circuit configuration 8 6 1 2 3 7 5 4 start of commercial production 2008-10
tpc8047-h 2013-11-01 2 thermal characteristics ...25 , i ar = 16 a note 4: repetitive rating: pulse width limited by maximum channel temperatu... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
203.80K /
7 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPC8053-H
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| OCR Text |
... ? small gate charge: q sw = 6.7 nc (typ.) ? low drain-source on-resistance: r ds (on) = 14.1 m (typ.) ? high forward transfer ...25 ) (note 4) e ar 0.06 mj channel temperature t ch 150 c storage temperature range t stg ... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
195.68K /
7 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPC8057-H
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| OCR Text |
... = 10 a (max) (v ds = 30 v) (6) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.5 ma) 3. 3. 3. 3. packaging and intern...25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless other... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
227.06K /
9 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPCA8039-H
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| OCR Text |
...? small gate charge: q sw = 8.6 nc (typ.) ? low drain-source on-resistance: r ds (on) = 3.8 m (typ.) ? high forward transfer admitt...25 ) p d 45 w drain power dissipation (t = 10 s) (note 2a) p d 2.8 w drain power dissipat... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
194.17K /
7 Page |
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it Online |
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TOSHIBA
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| Part No. |
TPCA8046-H
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| OCR Text |
...(t = 10 s) (note 2b) p d 1.6 w single-pulse avalanche energy (note 3) e as 134 mj avalanche current i ar 38 a repetitive avalanche energy (tc = 25 ) (note 4) e ar 4.34 mj channel temperature t ch 150 c storage temperatu... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
188.86K /
7 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPCA8A02-H
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| OCR Text |
... forward voltage: v dsf = ? 0.6 v (max) ? high-speed switching ? small gate charge: q sw = 8.6 nc (typ.) ? low drain-source on-re...25 ) p d 45 w drain power dissipation (t = 10 s) (note 2a) p d 2.8 w drain power dissipat... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
223.73K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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