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  64 32 Datasheet PDF File

For 64 32 Found Datasheets File :: 505684    Search Time::5.25ms    
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    2SA1190 2SA1191

HITACHI[Hitachi Semiconductor]
Part No. 2SA1190 2SA1191
OCR Text ...e Noise figure Cob NF VCE = -6 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, I C = -0.1 mA, Rg = 10 k f = 1 kHz VCE = -6 V, ...4 5 -20 400 -12 -15 -8 -10 -5 A 200 -4 IB = 0 0 50 100 150 Ambient Temp...
Description Silicon PNP Epitaxial

File Size 44.42K  /  10 Page

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    2SA1193 2SA1193K

HITACHI[Hitachi Semiconductor]
Part No. 2SA1193 2SA1193K
OCR Text ...lector current IC (A) -3 -1.0 0.6 -0.3 -0.1 -0.03 -0.01 -0.003 -3 iC (peak) IC max Area of Safe Operation PW t ho 1s t sho ot ms ms 1 1 sh ...4 -6 -8 -10 Collector to Emitter Voltage VCE (V) 3 2SA1193(K) Saturation Voltage vs. Collecto...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 33.83K  /  6 Page

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    2SA1194 2SA1194K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1194 2SA1194K
OCR Text ...acteristics P c= .0 -0.8 8W -1 .6 TC = 25C -0 4 -0. DC Current Transfer Ratio vs. Collector Current 100,000 DC current transfer ratio hFE 30,000 10,000 3,000 1,000 300 100 -10 VCE = -3 V Pulse Ta = 75C 25C -1,000 Collector Current IC (mA...
Description Silicon PNP Epitaxial

File Size 34.49K  /  5 Page

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    2SA2011 2SC5564

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SA2011 2SC5564
OCR Text ...2038A [2SA2011/2SC5564] 4.5 1.6 1.5 Features * Adoption of MBIT processes. * Large current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall-sized package permitting applied sets to be ma...
Description    DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

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    2SA2012 2SC5565

SANYO[Sanyo Semicon Device]
Part No. 2SA2012 2SC5565
OCR Text ...2038A [2SA2012/2SC5565] 4.5 1.6 1.5 Features * Adoption of MBIT processes. * Large current capacitance. * Low collector-to-emitter saturation voltage. * Ultrasmall-sized package permitting applied sets to be made small and slim. * Hig...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

File Size 48.24K  /  5 Page

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    2SA2013 2SC5566

SANYO[Sanyo Semicon Device]
Part No. 2SA2013 2SC5566
OCR Text ...2038A [2SA2013/2SC5566] 4.5 1.6 1.5 Features * Adoption of FBET and MBIT processes. * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall package facilitates miniaturization in...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications

File Size 48.85K  /  5 Page

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    2SA2016 2SC5569

SANYO[Sanyo Semicon Device]
Part No. 2SA2016 2SC5569
OCR Text ... 2163 [2SA2016/2SC5569] 4.5 1.6 1.5 Features * Adoption of FBET and MBIT processes. * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall package facilitales miniaturization in...
Description    DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

File Size 48.94K  /  5 Page

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    2SA2018 2SA2030 2SA2119K

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2018 2SA2030 2SA2119K
OCR Text ...IC = 200mA / IB = 10mA 0.8 1.6 0.15 0.1Min. Each lead has same dimensions ROHM : EMT3 EIAJ : SC-75A JEDEC : SOT-416 Abbrevia...4 0.4 0.8 0.13 0.5 0.22 Each lead has same dimensions ROHM : VMT3 Abbreviated symb...
Description Low frequency transistor

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    2SA2022 2SC5610

Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Part No. 2SA2022 2SC5610
OCR Text ... 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 12 3 2.55 2.4 2.4 0.7 2.55 Specifications ( ) : 2SA2022 Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-B...
Description NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR,BJT,NPN,50V V(BR)CEO,7A I(C),TO-220ML
From old datasheet system

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    2SA2023 2SC5611

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2023 2SC5611
OCR Text ...age facilitating mounting. 1.6 0.8 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Note * ( ) : 2...4.8 Note : The emitter and base are reversely assigned to those of our standard products encapsul...
Description 60V / 5A High-Speed Switching Applications 0V / 5A条高速开关应
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications
PNP Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications

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