...IC PT Tj Tstg 9 6 2 30 125 150 -65 to +150 V V V mA mW C C
1. Emitter 2. Base 3. Collector
Document No. P10389EJ2V0DS00 (2nd edition) ...80 A 60 A 40 A 20 A
200 100 50
10
20
10 0 2 4 6 8 1 2 5 10 20 50 100 VCE - Collector...
Description
NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD 128 x 128 pixel format, LED or EL Backlight available
... 4) (1.3)
2.0 0.2
0.60 0.65
ORDERING INFORMATION
PART NUMBER 2SC5013-T1
XYZ
QUANTITY 3 Kpcs/Reel.
PACKING STYLE Embossed...80 to 160 GB R48 125 to 250
2
2SC5013
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIP...
Description
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
...0 0.2 PART NUMBER 2SC5014-T1 0.65 0.3 +0.1 -0.05 0.15+0.1 -0.05 0.3 +0.1 -0.05 (1.3)
+0.1 0.3 0.4 -0.05
(1.25)
QUANTITY 3 Kpcs/Reel....80 A 60 A 40 A 20 A 5 VCE - Collector to Emitter Voltage - V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CU...
Description
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
...IC PT Ti Tstg 9 6 2 30 150 150 -65 to + 150 V V V mA mW C C
Caution: Electrostatic Sensitive Device
Document No. P10394EJ2V0DS00 (2nd ...80 A 60 A 40 A 20 A 2 4 6 8 500
DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V hFE - DC Curr...
Description
Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
...
4.0
s Features
q q
0.65 max.
1.0 1.0
High collector to base voltage VCBO. High emitter to base voltage VEBO.
0.2
s Ab...80 0.8mA 0.7mA 0.6mA 60 0.5mA 0.4mA 40 0.3mA 0.2mA 0.1mA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8...
Description
Transistor Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)
...- 11.5 -- Typ -- -- -- -- 120 0.65 11.0 14.0 14.5 1.1 Max -- 10 1 10 250 1.15 -- -- -- 2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C...80 60 40 20
0
50 100 150 Ambient Temperature Ta (C)
3
Unit: mm
0.425
2.0 0.2
0.1...