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For 8-ge Found Datasheets File :: 12815 Search Time::2.125ms
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				IXYS Corporation
Part No.	IXA27IF1200HJ
OCR Text	8 ces 43 1200 = v= v i= a features / advantages: applications: package: easy paralleling due to the positive temperature coefficient of...ge(th) i ces i = ma; v = v cgece v = v ; v = 0 v ce ces ge i ges t = 25c vj gat...
Description	Easy paralleling due to the positive temperature coefficient of the on-state voltage
File Size	126.13K / 6 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXA20IF1200HB
OCR Text	8 ces 38 1200 = v= v i= a features / advantages: applications: package: easy paralleling due to the positive temperature coefficient of...ge(th) i ces i = ma; v = v cgece v = v ; v = 0 v ce ces ge i ges t = 25c vj gat...
Description	Easy paralleling due to the positive temperature Easy paralleling due to the positive temperature
File Size	121.10K / 6 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	CXA2513M
OCR Text	... 2 3 4 5 6 7 8 9 10 TIMING CAP FLAT INIT ROCK -2- OUT1 FLAT GND ISET POP REF IN1 ...GE (Out1) - GE (Out2) Min. -- -- 2.7 12.6 Typ. 17.5 9.6 3.0 14.6 Max. 45.0 14.0 -- 16.6 Unit A mA Vp...
Description	3-Band Preset Graphic Equalizer IC (with standby and memory on last preset mode)
File Size	217.60K / 20 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXA17IF1200HJ
OCR Text	8 ces 28 1200 = v= v i= a features / advantages: applications: package: easy paralleling due to the positive temperature coefficient of...ge(th) i ces i = ma; v = v cgece v = v ; v = 0 v ce ces ge i ges t = 25c vj gat...
Description	XPT IGBT
File Size	124.42K / 6 Page	View it Online	Download Datasheet

				Vincotech
Part No.	V23990-P767-A-D3-14 V23990-P767-A-PM
OCR Text	...per chip r thjc 0,46 tj=25c 5 5,8 6,5 tj=150c tj=25c 1,87 2,3 tj=150c 2,28 tj=25c 0,015 tj=150c tj=25c 200 tj=150c tj=25c 108 tj=150c 109 tj...ge(th) 35 960 output capacitance reverse transfer capacitance diode forward voltage gate charge reve...
Description	3~rectifier,BRC,Inverter, NTC
File Size	522.79K / 24 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGP4266PBF
OCR Text	...tal switching loss 4.9 6.8 r g = 10 ? , l = 200h, t j = 25c t d(on) turn - on delay time 80 95 en...ge =15v e total total switching loss 7.0 r g =10 ? , l=200h,t j = 175c t d(o...
Description	Insulated Gate Bipolar Transistor
File Size	880.51K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGP4266DPBF
OCR Text	...urn-off switching loss ? 2.8 ? e total total switching loss ? 6.7 ? t d(on) turn-on delay time ? 50 ? ns t r rise t...ge = 0v c oes output capacitance ? 310 ? pf v cc = 30v c res reverse transfer capacitanc...
Description	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
File Size	753.64K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGP4262DPBF IRGP4262D-EPBF
OCR Text	...013 5101520 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 12a i ce = 24a i ce = 48a 0123 v f (v) 0 20 40 60 80 100 i f ( a ) -40c 25c 175c fig. 9 - typ. diode forward voltage drop characteristics 5101520 v ge (v) 0 2 4 6 8 10...
Description	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
File Size	678.44K / 12 Page	View it Online	Download Datasheet

				IXYS CORP
Part No.	GX60N60C2D1
OCR Text	....1 2.5 v note 1 t j = 125 c 1.8 v hiperfast tm igbt with diode symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t ...
Description	Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
File Size	615.83K / 5 Page	View it Online	Download Datasheet

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