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SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
LS31801111 LS3180-GK LS3180-H LS3180-J LS3180-JM LS3180-K LG3180-EH LG3180-G LG3180-GK LG3180-H LY3180-J LY3180-FJ LY3180-G LY3180-H LY3180-HL
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| Description |
Triac; Thyristor Type:Standard; peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS current, IT(rms):8A; Gate Trigger current (QI), Igt:50mA; current, It av:8A; Gate Trigger current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS current, IT(rms):8A; Gate Trigger current (QI), Igt:25mA; current, It av:8A; Gate Trigger current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS current, IT(rms):8A; Gate Trigger current (QI), Igt:35mA; current, It av:8A; Gate Trigger current Max, Igt:35mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS current, IT(rms):8A; Gate Trigger current (QI), Igt:10mA; current, It av:8A; Gate Trigger current Max, Igt:10mA RoHS Compliant: Yes T1毫米）广角发光二极管
T1 (3mm) WIDE ANGLE LED LAMP T1毫米）广角发光二极管
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| File Size |
91.48K /
1 Page |
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HIROSE ELECTRIC Co., Ltd.
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| Part No. |
BD139-25 BD135-25 BD137-25
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| Description |
Triac; Thyristor Type:Sensitive Gate; peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS current, IT(rms):800mA; Gate Trigger current (QI), Igt:5mA; current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126
Diac Thyristor; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:Axial Leaded; peak Surge current:2A; Breakover Voltage Min:30V RoHS Compliant: Yes 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|126
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| File Size |
35.46K /
3 Page |
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MICRO-ELECTRONICS[Micro Electronics]
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| Part No. |
MY31W MY31 MY31C MY31D MY31T
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| Description |
Triac; Thyristor Type:Logic Level; peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS current, IT(rms):8A; Gate Trigger current (QI), Igt:5mA
Triac; Thyristor Type:Snubberless; peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS current, IT(rms):8A; Gate Trigger current (QI), Igt
YELLOW LED LAMPS
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| File Size |
46.34K /
1 Page |
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Atmel, Corp.
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| Part No. |
STK10C48-5P35 STK10C48-5P35I STK10C48-5P30 STK10C48-5P30I STK10C48-5P45 STK10C48-5P45I STK10C48-5S35 STK10C48-5S35I STK10C48-5S30I STK10C48-5S45 STK10C48-5S45I
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| Description |
NVRAM (EEPROM Based)
Triac; Triac Type:Standard; peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS current, IT(rms):10A; Gate Trigger current (QI), Igt:50mA; Package/Case:3-TO-220; current, It av:10A; Holding current:50mA
Triac; Thyristor Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS current, IT(rms):10A; Gate Trigger current (QI), Igt:50mA; current, It av:10A; Gate Trigger current Max, Igt:50mA; Holding current:50mA RoHS Compliant: Yes
Triac; Triac Type:Standard; peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS current, IT(rms):15A; Gate Trigger current (QI), Igt:50mA; Package/Case:3-TO-220; current, It av:15A; Holding current:70mA
Triac; Thyristor Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS current, IT(rms):16A; Gate Trigger current (QI), Igt:20mA; current, It av:16A; Gate Trigger current Max, Igt:20mA; Holding current:35mA RoHS Compliant: Yes
Triac; Triac Type:Internally Triggered; peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS current, IT(rms):15A; Gate Trigger current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger current Max, Igt:1.5A
Triac; Triac Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS current, IT(rms):16A; Gate Trigger current (QI), Igt:35mA; Package/Case:3-TO-220; current, It av:16A; Gate Trigger current Max, Igt:35mA
Triac; Triac Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS current, IT(rms):16A; Gate Trigger current (QI), Igt:80mA; Package/Case:3-TO-220; current, It av:16A; Gate Trigger current Max, Igt:80mA
Triac; Triac Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS current, IT(rms):10A; Gate Trigger current (QI), Igt:50mA; Package/Case:3-TO-220; current, It av:10A; Gate Trigger current Max, Igt:50mA NVRAM中（EEPROM的基础
Triac; Triac Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS current, IT(rms):12A; Gate Trigger current (QI), Igt:50mA; Package/Case:3-TO-220; current, It av:12A; Gate Trigger current Max, Igt:50mA NVRAM中（EEPROM的基础
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| File Size |
298.67K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
http://
Fairchild Semiconductor, Corp.
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| Part No. |
CNY-2.S CNY-2-MS CNY-2-MSR2 CNY-2-MSR2V CNY-2-MSV CNY-2-MT CNY-2-MTV CNY-2-MV CNY-2.300 CNY-2.300W CNY-2.3S CNY-2.3SD CNY-2.SD CNY-2.W CNY174W CNY-1.300 CNY-1.300W CNY-1.3S CNY-1.3SD CNY-1.S CNY-1.SD CNY-1.W CNY17-1 CNY171300 CNY17-1300 CNY171300W CNY17-1300W CNY1713S CNY17-13S CNY1713SD CNY17-13SD CNY171S CNY17-1S CNY171SD CNY17-1SD CNY171SM CNY17-1SM CNY171SR2M CNY17-1SR2M CNY171SR2VM CNY17-1SR2VM CNY171SVM CNY17-1SVM CNY171TM CNY17-1TM CNY171TVM CNY17-1TVM CNY171VM CNY17-1VM CNY171W CNY17-1W CNY17-2 CNY172300 CNY17-2300 CNY172300W CNY17-2300W CNY1723S CNY17-23S CNY1723SD CNY17-23SD CNY172S CNY17-2S CNY172SD CNY17-2SD CNY172SM CNY17-2SM CNY172SR2M CNY17-2SR2M CNY172SR2VM CNY17-2SR2VM CNY172SVM CNY17-2SVM CNY172TM CNY17-2TM CNY172TVM CNY17-2TVM CNY172VM CNY17-2VM CNY172W CNY17-2W CNY17-3 CNY173300 CNY17-3300 CNY173300W CNY17-3300W CNY1733S CNY17-33S CNY1733SD CNY17-33SD CNY173S CNY17-3S CNY173SD CNY17-3SD CNY173SM CNY17-3SM CNY173SR2M CNY17-3SR2M CNY173SR2VM CNY17-3SR2VM CNY173SVM CNY17-3SVM CNY173TM CNY17-3TM CNY173TVM CNY17-3TVM CNY173VM CNY17-3VM CNY173W CNY17-3W CNY17-4 CNY174300 CNY17-4300 CNY174300W CNY17-4300W CNY1743S CNY17-43S CNY1743SD CNY17-43SD CNY174S CNY17-4S CNY174S
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| Description |
Phototransistor Optocouplers
Triac; Thyristor Type:Snubberless; peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS current, IT(rms):12A; Gate Trigger current (QI), Igt:50mA; current, It av:12A; Gate Trigger current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS current, IT(rms):12A; Gate Trigger current (QI), Igt:50mA; current, It av:12A; Gate Trigger current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS current, IT(rms):12A; Gate Trigger current (QI), Igt:35mA; current, It av:12A; Gate Trigger current Max, Igt:35mA RoHS Compliant: Yes
2.2 UFD.16WVDC.20%.3216.CASE A.TANT
Hook-Up Wire; Conductor Size AWG:20; Jacket Color:Black; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 3173; CSA Type CL1251; Conductor Material:Copper; Jacket Material:XLPE Polyethylene; Leaded Process Compatible:Yes RoHS Compliant: Yes
Multiconductor Paired EIA Industrial RS-485 Cable; Number of Conductors:2; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER DIP-6
Phototransistor Optocouplers 光电晶体管光电耦合
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER SURFACE MOUNT PACKAGE-6
Triac; Thyristor Type:Logic Level; peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS current, IT(rms):16A; Gate Trigger current (QI), Igt:10mA; current, It av:16A; Gate Trigger current Max, Igt:10mA RoHS Compliant: Yes 光电晶体管光电耦合
Triac; Thyristor Type:Snubberless; peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS current, IT(rms):16A; Gate Trigger current (QI), Igt:50mA; current, It av:16A; Gate Trigger current Max, Igt:50mA RoHS Compliant: Yes 光电晶体管光电耦合
Triac; Thyristor Type:Snubberless; peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS current, IT(rms):16A; Gate Trigger current (QI), Igt:35mA; current, It av:16A; Gate Trigger current Max, Igt:35mA RoHS Compliant: Yes 光电晶体管光电耦合
Triac; Thyristor Type:Standard; peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS current, IT(rms):16A; Gate Trigger current (QI), Igt:50mA; current, It av:16A; Gate Trigger current Max, Igt:50mA RoHS Compliant: Yes 光电晶体管光电耦合
Triac; Thyristor Type:Logic Level; peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS current, IT(rms):16A; Gate Trigger current (QI), Igt:10mA; current, It av:16A; Gate Trigger current Max, Igt:10mA RoHS Compliant: Yes 光电晶体管光电耦合
Triac; Thyristor Type:Logic Level; peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS current, IT(rms):12A; Gate Trigger current (QI), Igt:5mA; current, It av:12A; Gate Trigger current Max, Igt:5mA RoHS Compliant: Yes 光电晶体管光电耦合
Triac; Thyristor Type:Logic Level; peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS current, IT(rms):12A; Gate Trigger current (QI), Igt:10mA; current, It av:12A; Gate Trigger current Max, Igt:10mA RoHS Compliant: Yes 光电晶体管光电耦合
Triac; Thyristor Type:Standard; peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS current, IT(rms):16A; Gate Trigger current (QI), Igt:50mA; current, It av:16A; Gate Trigger current Max, Igt:50mA RoHS Compliant: Yes 光电晶体管光电耦合
Phototransistor Optocouplers 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
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| File Size |
173.36K /
14 Page |
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Electronic Theatre Controls, Inc.
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| Part No. |
STK11C68-5S30 STK11C68-5S45 STK11C68-5S25 STK11C68-5S35 STK11C68-5S45I STK11C68-5S25I STK11C68-5P25 STK11C68-5C45 STK11C68-5C45I STK11C68-5P45I STK11C68-5P25I STK11C68-5P30 STK11C68-5C25I STK11C68-5C30 STK11C68-5C30I STK11C68-5S35I
|
| Description |
Triac; Triac Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS current, IT(rms):8A; Gate Trigger current (QI), Igt:35mA; Package/Case:3-TO-220; current, It av:8A; Gate Trigger current Max, Igt:35mA
Triac; Triac Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS current, IT(rms):8A; Gate Trigger current (QI), Igt:35mA; Package/Case:V-PAK; current, It av:8A; Gate Trigger current Max, Igt:35mA
Triac; Triac Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS current, IT(rms):8A; Gate Trigger current (QI), Igt:35mA; Package/Case:D-PAK; current, It av:8A; Gate Trigger current Max, Igt:35mA
Triac; Thyristor Type:Standard; peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS current, IT(rms):8A; Gate Trigger current (QI), Igt:50mA; current, It av:8A; Holding current:50mA; Leaded Process Compatible:Yes RoHS Compliant: Yes
Triac; Triac Type:Standard; peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS current, IT(rms):10A; Gate Trigger current (QI), Igt:50mA; Package/Case:3-TO-220; current, It av:10A; Holding current:50mA
Triac; Triac Type:Standard; peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS current, IT(rms):8A; Gate Trigger current (QI), Igt:50mA; Package/Case:3-TO-220; current, It av:8A; Holding current:50mA
Triac; Triac Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS current, IT(rms):40A; Gate Trigger current (QI), Igt:100mA; Package/Case:3-TO-218; current, It av:40A; Gate Trigger current Max, Igt:100mA
Triac; Triac Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS current, IT(rms):6A; Gate Trigger current (QI), Igt:35mA; Package/Case:V-PAK; current, It av:6A; Gate Trigger current Max, Igt:35mA
Triac; Thyristor Type:Standard; peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS current, IT(rms):6A; Gate Trigger current (QI), Igt:50mA; current, It av:6A; Holding current:50mA; Leaded Process Compatible:Yes RoHS Compliant: Yes
Triac; Triac Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS current, IT(rms):6A; Gate Trigger current (QI), Igt:35mA; Package/Case:3-TO-220; current, It av:6A; Gate Trigger current Max, Igt:35mA
Triac; Triac Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS current, IT(rms):25a; Gate Trigger current (QI), Igt:80mA; Package/Case:3-TO-220; current, It av:25a; Gate Trigger current Max, Igt:80mA
Triac; Triac Type:Standard; peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS current, IT(rms):25a; Gate Trigger current (QI), Igt:50mA; Package/Case:TO-3; current, It av:25a; Holding current:50mA
Triac; Triac Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS current, IT(rms):25a; Gate Trigger current (QI), Igt:80mA; Package/Case:3-TO-218; current, It av:25a; Gate Trigger current Max, Igt:80mA
Triac; Thyristor Type:Alternistor; peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS current, IT(rms):25a; Gate Trigger current (QI), Igt:80mA; current, It av:25a; Gate Trigger current Max, Igt:80mA; Holding current:100mA RoHS Compliant: Yes
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
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| File Size |
564.07K /
9 Page |
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PANJIT[Pan Jit International Inc.]
PanJit International Inc.
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| Part No. |
GBL400 GBL404 GBL402 GBL401 GBL406 GBL408
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| Description |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts current - 4.0 Amperes)
Aluminum Polymer SMT Capacitor; Capacitance: 1000uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & Reel
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| File Size |
52.63K /
2 Page |
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NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
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| Part No. |
BY329X-1000 BY329X-1200 BY329F BY329F-B1200 BY329 BY329F-1200 BY329X-800 BY329F-1000 BY329F-800 BY329X
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| Description |
Triac; Thyristor Type:Logic Level; peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS current, IT(rms):6A; Gate Trigger current (QI), Igt:10mA; current, It av:6A; Gate Trigger current Max, Igt:10mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS current, IT(rms):6A; Gate Trigger current (QI), Igt:5mA; current, It av:6A; Gate Trigger current Max, Igt:5mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS current, IT(rms):6A; Gate Trigger current (QI), Igt:10mA; current, It av:6A; Gate Trigger current Max, Igt:10mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS current, IT(rms):6A; Gate Trigger current (QI), Igt:50mA
Triac; Thyristor Type:Snubberless; peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS current, IT(rms):6A; Gate Trigger current (QI), Igt:35mA; current, It av:6A; Gate Trigger current Max, Igt:35mA RoHS Compliant: Yes
Rectifier diodes fast/ soft-recovery
Rectifier diodes fast, soft-recovery
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| File Size |
56.28K /
7 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NTE5868 NTE5867 NTE5860 NTE5857 NTE5858 NTE5851 NTE5852 NTE5853 NTE5854 NTE5855 NTE5856 NTE5859
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| Description |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
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| File Size |
23.18K /
2 Page |
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Price and Availability
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