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  8ghz Datasheet PDF File

For 8ghz Found Datasheets File :: 992    Search Time::1.266ms    
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    MIC-5602A2-M2E MIC-5602A2-M4E MIC-56021

Advantech Co., Ltd.
http://
Part No. MIC-5602A2-M2E MIC-5602A2-M4E MIC-56021
OCR Text ...sion Intel(R)CoreTM2DuoSL9380(1.8ghz) Intel3100 AMI(1.Dualimageswithupdaterollback,2.CMOSsettingscanbechangedoverIPMI,and3.CMOSbackupworks withoutbattery) 800MHz PCIExpressrev1.0a:onex8andtwox4routedtoAMCconnector DDRII400withECC 4GB Intel8...
Description Advanced Mezzanine Card Intel垄莽 45 nm Core垄芒 2 Duo Processor AMC
Advanced Mezzanine Card Intel? 45 nm Core?/a> 2 Duo Processor AMC

File Size 352.70K  /  2 Page

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    FPD6836P70 FPD6836P701

Filtronic Compound Semiconductors
Part No. FPD6836P70 FPD6836P701
OCR Text ...WiMax (2-11GHz) WLAN 802.11a (5.8ghz) Point-to-Point Radio (to 18ghz) ELECTRICAL SPECIFICATIONS: PARAMETER Power at 1dB Gain Compression Small Signal Gain Power-Added Efficiency SYMBOL P1dB SSG PAE CONDITIONS VDS = 5 V; IDS = 5...
Description LOW NOISE HIGH FREQUENCY PACKAGED PHEMT

File Size 249.08K  /  9 Page

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    BFP193W Q62702-F1577

SIEMENS[Siemens Semiconductor Group]
Part No. BFP193W Q62702-F1577
OCR Text 8ghz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 193W RCs Q62702-F1577 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Paramete...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

File Size 60.05K  /  7 Page

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    BFP193 Q62702-F1282 BFP193Q62702-F1282

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text 8ghz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 193 RCs Q62702-F1282 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

File Size 60.37K  /  7 Page

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    LT5557EUF-PBF

Linear Technology
Part No. LT5557EUF-PBF
OCR Text 8ghz 3.3V High Signal Level Downconverting Mixer FEATURES DESCRIPTIO 3.3V Operation for Reduced Power 50 Single-Ended RF and LO Ports Wide RF Frequency Range: 400MHz to 3.8ghz* High Input IP3: 25.6dBm at 900MHz 24.7dBm ...
Description 400MHz to 3.8ghz 3.3V High Signal Level Downconverting Mixer

File Size 232.10K  /  16 Page

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    Q62702-F1359 BFG19S BFG19

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1359 BFG19S BFG19
OCR Text ...er Gain Gma, Gms = f(IC) f = 1.8ghz VCE = Parameter 10 dB 10V G G 5V 3V 6 2V 8 1V 6 4 1V 2 4 0.7V 2 0 20 40 60 80 mA IC 120 0 0.7V -2 0 20 40 60 80 mA IC 120 Semiconductor Gro...
Description NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna)
From old datasheet system
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)

File Size 49.50K  /  6 Page

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    Q62702-F1382 BFP183

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
Part No. Q62702-F1382 BFP183
OCR Text ...er Gain Gma, Gms = f(IC) f = 1.8ghz VCE = Parameter 16 dB 10V 5V dB 10V G 18 G 12 3V 2V 3V 2V 16 10 8 14 6 12 1V 4 10 0.7V 1V 0.7V 2 0 8 0 5 10 15 20 25 30 35 mA IC 45 0 5 10 15 20 ...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管(对于低噪声,高增益2毫安0毫安的集电极电流宽带放大器)
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

File Size 60.49K  /  7 Page

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    Q62702-F1492 BFR182W

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1492 BFR182W
OCR Text ...urrents from 1mA to 20mA * fT = 8ghz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 182W RGs Q62702-F1492 1=B 2=E 3=C Package SOT-323...
Description NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system

File Size 55.96K  /  7 Page

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    Q62702-F1494 BFR280W

SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1494 BFR280W
OCR Text ...er Gain Gma, Gms = f(IC) f = 1.8ghz VCE = Parameter 14 dB 2V 10V 3V 2V G 16 G 10 14 1V 12 0.7V 8 1V 6 0.7V 10 4 8 2 6 0 2 4 6 8 mA IC 11 0 0 2 4 6 8 mA IC 11 Semiconductor Group 6 De...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems
From old datasheet system

File Size 56.22K  /  7 Page

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    SBFP420M

SANYO[Sanyo Semicon Device]
Part No. SBFP420M
OCR Text ... Low noise : NF=1.1dB typ (f=1.8ghz). High cut-off frequency : fT=18ghz typ (VCE=1V). : fT=25GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=17dB typ (f=1.8ghz). 0.3 4 3 0.15 1.6 1 1.3 2.0 2 0.25 2.1 0.85 1...
Description UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications

File Size 44.73K  /  2 Page

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For 8ghz Found Datasheets File :: 992    Search Time::1.266ms    
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