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				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	...32F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words...2m x 16 Sense AMP 8M x 4 / 4M x 8 / 2m x 16 8M x 4 / 4M x 8 / 2m x 16 8M x 4 / 4M x 8 / 2m x 16 Refr...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Samsung Semiconductor Co., Ltd.
Part No.	K8D3216UTC-PI07T K8D3216UTC-TC070 K8D3216UBC-DC070 K8D3216UBC-DI080 K8D3216UBC-TC070
OCR Text	...program operation in units of 8 bits (byte) or 16 bits (word) and erases in units of a block. single or multiple blocks can be erased. the block erase operation is completed within typically 0.7 sec. the device requires 15ma as program/era...
Description	2m X 16 FLASH 2.7V PROM, 70 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 2m X 16 FLASH 2.7V PROM, 70 ns, PBGA48 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 2m X 16 FLASH 2.7V PROM, 80 ns, PBGA48
File Size	729.03K / 44 Page	View it Online	Download Datasheet

				Alliance Semiconductor, Corp.
Part No.	AS7C252mPFS18A-167BC
OCR Text	...ganization: 2,097,152 words 18 bits ? fast clock speeds to 200 mhz in lvttl/lvcmos ? fast clock to data access: 3.1/3.4/3.8 ns ?fast oe ...2m x 18 memory array 18 18 dqb clk dq byte write registers dqa clk dq byte write registers enable cl...
Description	2m X 18 STANDARD SRAM, 7.5 ns, PBGA165 BGA-165
File Size	545.53K / 22 Page	View it Online	Download Datasheet

				Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
Part No.	MX27C2048PC-55 MX27C2048PC-90 MX27C2048QC-55 MX27C2048QC-70 MX27C2048TC-90 MX27C2048QC-15 MX27C2048TC-15
OCR Text	...s organized as 128k words by 16 bits per word(mx27c2048), 256k x 8 or 128k x 16(mx27c2100), operates from a single + 5 volt supply, has a s...2m-bit [256kx8/128x16] cmos eprom mx27c2048 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 vpp c...
Description	2m-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 55 ns, PDIP40 2m-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 90 ns, PDIP40 2m-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 55 ns, PQCC44 2m-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 70 ns, PQCC44 2m-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 90 ns, PDSO40 2m-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 150 ns, PQCC44 2m-BIT [256Kx8/128x16] CMOS EPROM 128K X 16 OTPROM, 150 ns, PDSO40
File Size	766.70K / 18 Page	View it Online	Download Datasheet

				ATMEL Corporation Atmel Corp.
Part No.	AT52BC3221A AT52BC3221AT AT52BC3221A-70CI AT52BC3221AT-70CI
OCR Text	...anized as 2,097,152 words of 16 bits each. The memory is divided into 71 sectors for erase operations. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply...
Description	32-Mbit Flash 8-Mbit PSRAM Stack Memory 32-Mbit Flash 8-Mbit PSRAM Stacked Memory.
File Size	484.04K / 36 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4S280432F K4S280432F-TC75 K4S280432F-TL75 K4S281632F-TL75 K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60
OCR Text	...32F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words...2m x 16 Sense AMP 8M x 4 / 4M x 8 / 2m x 16 8M x 4 / 4M x 8 / 2m x 16 8M x 4 / 4M x 8 / 2m x 16 Refr...
Description	RES, 16.9, 1/16W, TKF, 1%, 0603 TV 11C 11#12 PIN RECP 128MB F-DIE SDRAM SPECIFICATION
File Size	140.81K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4S280432E K4S280432E-TL75 K4S280432E-TC75 K4S281632E-TL75 K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60
OCR Text	...32E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words...2m x 16 Sense AMP 8M x 4 / 4M x 8 / 2m x 16 8M x 4 / 4M x 8 / 2m x 16 8M x 4 / 4M x 8 / 2m x 16 Refr...
Description	128Mb E-die SDRAM Specification 128Mb的电子芯片内存规
File Size	142.99K / 14 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4S281632K
OCR Text	...32k / k4s281632k is 134,217,728 bits synchronous high data rate dynamic ram organized as 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words...2m x 16bit x 4 banks sdram row & column address configuration organization row address column addre...
Description	128Mb K-die SDRAM Specification
File Size	271.10K / 15 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	ADSP-21262S
OCR Text	...g unit (SRU) On-chip memory--2m bits of on-chip SRAM and a dedicated 4M bits of on-chip mask-programmable ROM Six independent synchronous serial ports provide a variety of serial communication protocols including TDM and I2S modes The ADSP-...
Description	ADSP-21262S 3rd Generation Low Cost 32-Bit Floating-Point SHARC DSP
File Size	482.29K / 44 Page	View it Online	Download Datasheet

For bits 2m Found Datasheets File :: 2293 Search Time::1.203ms
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